-
1
-
-
4244014869
-
-
10.1103/PhysRevLett.3.34
-
F. J. Morin, Phys. Rev. Lett. 3, 34 (1959). 10.1103/PhysRevLett.3.34
-
(1959)
Phys. Rev. Lett.
, vol.3
, pp. 34
-
-
Morin, F.J.1
-
2
-
-
3042581419
-
-
10.1088/1367-2630/6/1/052
-
H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, New J. Phys. 6, 52 (2004). 10.1088/1367-2630/6/1/052
-
(2004)
New J. Phys.
, vol.6
, pp. 52
-
-
Kim, H.-T.1
Chae, B.-G.2
Youn, D.-H.3
Maeng, S.-L.4
Kim, G.5
Kang, K.-Y.6
Lim, Y.-S.7
-
3
-
-
34547341966
-
Evidence of a pessure-induced metallization process in monoclinic VO2
-
DOI 10.1103/PhysRevLett.98.196406
-
E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, Phys. Rev. Lett. 98, 196406 (2007). 10.1103/PhysRevLett.98.196406 (Pubitemid 47139531)
-
(2007)
Physical Review Letters
, vol.98
, Issue.19
, pp. 196406
-
-
Arcangeletti, E.1
Baldassarre, L.2
Di Castro, D.3
Lupi, S.4
Malavasi, L.5
Marini, C.6
Perucchi, A.7
Postorino, P.8
-
4
-
-
79951898043
-
-
10.1063/1.3553504
-
S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B. J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, Appl. Phys. Lett. 98, 071105 (2011). 10.1063/1.3553504
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 071105
-
-
Choi, S.B.1
Kyoung, J.S.2
Kim, H.S.3
Park, H.R.4
Park, D.J.5
Kim, B.J.6
Ahn, Y.H.7
Rotermund, F.8
Kim, H.-T.9
Ahn, K.J.10
Kim, D.S.11
-
7
-
-
0028515666
-
-
10.1063/1.112974
-
M. F. Becker, A. B. Buckman, R. M. Walser, T. Lbpine, P. Georges, and A. Brun, Appl. Phys. Lett. 65, 1507 (1984). 10.1063/1.112974
-
(1984)
Appl. Phys. Lett.
, vol.65
, pp. 1507
-
-
Becker, M.F.1
Buckman, A.B.2
Walser, R.M.3
Lbpine, T.4
Georges, P.5
Brun, A.6
-
8
-
-
33947686205
-
-
10.5370/JEET.2006.1.1.023
-
B. M. Yang, C. K. Kim, G. J. Jung, and Y. H. Moon, KIEE J. Electr. Eng. Technol. 1, 23 (2006). 10.5370/JEET.2006.1.1.023
-
(2006)
KIEE J. Electr. Eng. Technol.
, vol.1
, pp. 23
-
-
Yang, B.M.1
Kim, C.K.2
Jung, G.J.3
Moon, Y.H.4
-
10
-
-
77949385463
-
-
10.5370/JEET.2010.5.1.054
-
S.-G Kang, S. Seo, B. Lee, and J.-Y Joo, KIEE J. Electr. Eng. Technol. 5, 54 (2010). 10.5370/JEET.2010.5.1.054
-
(2010)
KIEE J. Electr. Eng. Technol.
, vol.5
, pp. 54
-
-
Kang, S.-G.1
Seo, S.2
Lee, B.3
Joo, J.-Y.4
-
11
-
-
14844330666
-
2 nanocrystals: Ultrafast control of surface-plasmon resonance
-
DOI 10.1364/OL.30.000558
-
M. Rini, M. Rini, A. Cavalleri, R. W. Schoenlein, R. Lpez, L. C. Feldman, R. F. Haglund, Jr. , L. A. Boatner, and T. E. Haynes, Opt. Lett. 30, 558 (2005). 10.1364/OL.30.000558 (Pubitemid 40339512)
-
(2005)
Optics Letters
, vol.30
, Issue.5
, pp. 558-560
-
-
Rini, M.1
Cavalleri, A.2
Schoenlein, R.W.3
Lopez, R.4
Feldman, L.C.5
Haglund Jr., R.F.6
Boatner, L.A.7
Haynes, T.E.8
-
13
-
-
70349313595
-
-
10.1126/science.1176580
-
T. Driscoll, H.-T. Kim, B.-G. Chae, B.-J. Kim, Y.-W. Lee, N. M. Jokerst, S. Palit, D. R. Smith, M. Di Ventra, and D. N. Basov, Sciences (N.Y.) 325, 1518 (2009). 10.1126/science.1176580
-
(2009)
Sciences (N.Y.)
, vol.325
, pp. 1518
-
-
Driscoll, T.1
Kim, H.-T.2
Chae, B.-G.3
Kim, B.-J.4
Lee, Y.-W.5
Jokerst, N.M.6
Palit, S.7
Smith, D.R.8
Di Ventra, M.9
Basov, D.N.10
-
14
-
-
34748903114
-
Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film
-
DOI 10.1364/OE.15.012108
-
Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, Opt. Express 15, 12108 (2007). 10.1364/OE.15.012108 (Pubitemid 47484972)
-
(2007)
Optics Express
, vol.15
, Issue.19
, pp. 12108-12113
-
-
Lee, Y.W.1
Kim, B.-J.2
Choi, S.3
Kim, H.-T.4
Kim, G.5
-
15
-
-
0024965835
-
-
10.1049/el:19891069
-
R. F. Carson, R. C. Hughes, T. E. Zipperian, H. T. Weaver, T. M. Brennan, B. E. Hammons, and J. F. Klem, Electron. Lett. 25, 1592 (1989). 10.1049/el:19891069
-
(1989)
Electron. Lett.
, vol.25
, pp. 1592
-
-
Carson, R.F.1
Hughes, R.C.2
Zipperian, T.E.3
Weaver, H.T.4
Brennan, T.M.5
Hammons, B.E.6
Klem, J.F.7
-
16
-
-
79952312214
-
-
10.1016/j.tsf.2010.12.168
-
G. Seo, B. J. Kim, Y. W. Lee, S. Choi, J. H. Shin, and H. T. Kim, Thin Solid Films 519, 3383 (2011). 10.1016/j.tsf.2010.12.168
-
(2011)
Thin Solid Films
, vol.519
, pp. 3383
-
-
Seo, G.1
Kim, B.J.2
Lee, Y.W.3
Choi, S.4
Shin, J.H.5
Kim, H.T.6
-
18
-
-
21344449909
-
Raman study of electric-field-induced first-order metal-insulator transition in VO2 -based devices
-
DOI 10.1063/1.1941478, 242101
-
H. T. Kim, B. G. Chae, D. H. Youn, G. Kim, and K. Y. Kang, Appl. Phys. Lett. 86, 242101 (2005). 10.1063/1.1941478 (Pubitemid 40908724)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.24
, pp. 1-3
-
-
Kim, H.-T.1
Chae, B.-G.2
Youn, D.-H.3
Kim, G.4
Kang, K.-Y.5
Lee, S.-J.6
Kim, K.7
Lim, Y.-S.8
-
20
-
-
34547720854
-
-
S.-P. Nam, S.-G. Lee, S.-G. Bee, and Y.-H. Lee, KIEE J. Electr. Eng. Technol. 2, 98 (2007).
-
(2007)
KIEE J. Electr. Eng. Technol.
, vol.2
, pp. 98
-
-
Nam, S.-P.1
Lee, S.-G.2
Bee, S.-G.3
Lee, Y.-H.4
-
22
-
-
68249109103
-
-
10.1063/1.3187531
-
T. Driscoll, H.-T. Kim, B.-G. Chae, M. Di Ventra, and D. N. Basov, Appl. Phys. Lett. 95, 043503 (2009). 10.1063/1.3187531
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 043503
-
-
Driscoll, T.1
Kim, H.-T.2
Chae, B.-G.3
Di Ventra, M.4
Basov, D.N.5
-
23
-
-
78751538887
-
-
10.1063/1.3518508
-
H. Coy, R. Cabrera, N. Seplveda, and F. E. Fernández, J. Appl. Phys. 108, 113115 (2010). 10.1063/1.3518508
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 113115
-
-
Coy, H.1
Cabrera, R.2
Seplveda, N.3
Fernández, F.E.4
-
25
-
-
80055019352
-
-
10.1109/LED.2011.2163922
-
G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, IEEE Electron Device Lett. 32, 1582 (2011). 10.1109/LED.2011. 2163922
-
(2011)
IEEE Electron Device Lett.
, vol.32
, pp. 1582
-
-
Seo, G.1
Kim, B.J.2
Ko, C.3
Cui, Y.4
Lee, Y.W.5
Shin, J.H.6
Ramanathan, S.7
Kim, H.T.8
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