Improved thin film transistor performance of solution-processed-zinc-oxide nanorods with spin-on-glass capping layer

Current Applied Physics

Volumn 12, Issue SUPPL. 1, 2012, Pages

  Hasan, Musarrat ^a   Oh, Ji Young ^b   Park, Jonghyurk ^b   Lim, Sang Chul ^b   Kim, Hee Ok ^b   Kang, Seung Youl ^b  

^a Inha University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Defect chemistry; SOG capping layer; ZnO nanorods

Indexed keywords

ANNEALING TEMPERATURES; CAPPING LAYER; CRYSTALLINE PROPERTIES; DEFECT CHEMISTRY; DEVICE PERFORMANCE; LOW TEMPERATURES; OXIDE MATERIALS; PHYSICAL CHARACTERIZATION; PROTECTIVE LAYERS; SPIN ON GLASS; TRANSISTOR PERFORMANCE; ZNO; ZNO NANOROD;

NANORODS; OXYGEN; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84862874178     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.08.005     Document Type: Conference Paper

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