Structure and magnetic characteristics of Si-doped AlN films

Journal of Alloys and Compounds

Volumn 519, Issue , 2012, Pages 41-46

  Pan, D ^a,b   Jian, J K ^a   Sun, Y F ^a   Wu, R ^a  

^a XINJIANG UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Crystal structure; Magnetically ordered materials; Radio frequency reactive sputtering; Room temperature ferromagnetism; Si doped AlN

Indexed keywords

ALN; ALN FILMS; COERCIVE FIELD; DILUTED MAGNETIC SEMICONDUCTORS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; LONG RANGE MAGNETIC ORDER; MAGNETIC CHARACTERISTIC; MAGNETICALLY ORDERED MATERIAL; MAGNETIZATION CURVES; NONMAGNETIC DOPANTS; RADIO FREQUENCY REACTIVE SPUTTERING; ROOM-TEMPERATURE FERROMAGNETISM; SI ATOMS; SI CONTENT; SI(1 0 0); STRUCTURAL AND MAGNETIC PROPERTIES;

CRYSTAL STRUCTURE; DOPING (ADDITIVES); ENERGY DISPERSIVE SPECTROSCOPY; FERROMAGNETISM; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; RADIO WAVES; SATURATION MAGNETIZATION; X RAY DIFFRACTION ANALYSIS;

SILICON;

EID: 84862819238     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.12.015     Document Type: Article

References (39)

1. S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, S. von Molnár, M.L. Roukes, A.Y. Chtchelkanova, and D.M. Treger Science 294 2001 1488 1495
2. D. Kumar, J. Antifakos, M.G. Blamire, and Z.H. Barber Appl. Phys. Lett. 84 2004 5004 5006
3. Y. Endo, T. Sato, A. Takita, Y. Kawamura, and M. Yamamoto IEEE Trans. Magn. 41 2005 2718 2720
4. H.X. Liu, S.Y. Wu, R.K. Singh, L. Gu, D.J. Smith, N. Newman, N.R. Dilley, L. Montes, and M.B. Simmonds Appl. Phys. Lett. 85 2004 4076 4078
5. M.H. Ham, S. Yoon, Y. Park, and J.M. Myoung J. Cryst. Growth 271 2004 420 424
6. X.H. Ji, S.P. Lau, S.F. Yu, H.Y. Yang, T.S. Herng, A. Sedhain, J.Y. Lin, H.X. Jiang, K.S. Teng, and J.S. Chen Appl. Phys. Lett. 90 2007 193118 193120
7. S.L. Yang, R.S. Gao, P.L. Niu, and R.H. Yu Appl. Phys. A 96 2009 769 774
8. H. Li, H.Q. Bao, B. Song, W.J. Wang, and X.L. Chen Solid State Commun. 148 2008 406 409
9. R.Q. Wu, G.W. Peng, L. Liu, Y.P. Feng, Z.G. Huang, and Q.Y. Wu Appl. Phys. Lett. 89 2006 142501 142503
10. S.W. Fan, K.L. Yao, Z.G. Huang, J. Zhang, G.Y. Gao, and G.H. Du Chem. Phys. Lett. 482 2009 62 65
11. K. Li, X.B. Du, Y. Yan, H.X. Wang, Q. Zhan, and H.M. Jin Phys. Lett. A 374 2010 3671 3675
12. F.Y. Ran, M. Subramanian, M. Tanemura, Y. Hayashi, and T. Hihara Appl. Phys. Lett. 95 2009 112111 112113
13. W.W. Lei, D. Liu, P.W. Zhu, X.H. Chen, Q. Zhao, G.H. Wen, Q.L. Cui, and G.T. Zou Appl. Phys. Lett. 95 2009 162501 162503
14. M. Khizar, Z.Y. Fan, K.H. Kim, J.Y. Lin, and H.X. Jiang Appl. Phys. Lett. 86 2005 173504 173506
15. M. Hermann, F. Furtmayr, F.M. Morales, O. Ambacher, M. Stutzmann, and M. Eickhoff J. Appl. Phys. 100 2006 113531 113540
16. M. Kasu, Y. Taniyasu, and N. Kobayashi Jpn. J. Appl. Phys. Part 2 40 2001 L1048 L1050
17. C.D. Wagner, W.M. Riggs, L.E. Davis, and J.F. Moulder Handbook of X-ray Photoelectron Spectroscopy 1979 Physical Electronics Division Perkin-Elmer pp. 51-53
18. S.Y. Ren, and W.Y. Ching Phys. Rev. B 23 1981 5454 5463
19. F.A. Ponce, C.G.V. Walle, and J.E. Northrup Phys. Rev. B 53 1996 7473 7478
20. R. Frazier, G. Thaler, M. Overberg, B. Gila, C.R. Abernathy, and S.J. Pearton Appl. Phys. Lett. 83 2003 1758 1760
21. M. Kasu, and N. Kobayashi Appl. Phys. Lett. 78 2001 1835 1837
22. Y. Taniyasu, M. Kasu, and T. Makimoto Appl. Phys. Lett. 84 2004 2115 2117
23. Y.W. Ma, K.F. Huo, Q. Wu, Y.N. Lu, Y.M. Hu, Z. Hu, and Y. Chen J. Mater. Chem. 16 2006 2834 2838
24. H.T. Chen, X.L. Wu, X. Xiong, W.C. Zhang, L.L. Xu, J. Zhu, and P.K. Chu J. Phys. D: Appl. Phys. 41 2008 025101 025106
25. Y.G. Cao, X.L. Chen, Y.C. Lan, J.Y. Li, Y.P. Xu, T. Xu, Q.L. Liu, and J.K. Liang J. Cryst. Growth 213 2000 198 202
26. R.A. Youngman, J.H. Harris, and D.A. Chernoff Ceram. Trans. 5 1989 309 314
27. C.K. Xu, L. Xue, C.R. Yin, and G.H. Wan Phys. Status Solidi A 198 2003 329 335
28. Y.C. Lan, X.L. Chen, Y.G. Cao, Y.P. Xu, L.D. Xun, T. Xu, and J.K. Liang J. Cryst. Growth 207 1999 247 250
29. A.L. Rosa, and R. Ahuja Appl. Phys. Lett. 91 2007 232109 232111
30. Y. Zhang, S. Talapatra, S. Kar, R. Vajtai, S.K. Nayak, and P.M. Ajayan Phys. Rev. Lett. 99 2007 107201 107205
31. T.L. Makarova, B. Sundqvist, R. Höhne, P. Esquinazi, Y. Kopelevich, P. Scharff, V.A. Davydov, L.S. Kashevarova, and A.V. Rakhmanina Nature 413 2001 716 718
32. E. Tirosh, and G. Markovich Adv. Mater. 19 2007 2608 2612
33. N.H. Hong, N. Poirot, and J. Sakai Phys. Rev. B 77 2008 033205 033209
34. R.P. Davies, B.P. Gila, C.R. Abernathy, S.J. Pearton, and C.J. Stanton Appl. Phys. Lett. 96 2010 212502 212504
35. Y.L. Li, W.L. Fan, H.G. Sun, X.F. Cheng, P. Li, X. Zhao, and M.H. Jiang J. Solid State Chem. 183 2010 2662 2668
36. L.J. Shi, L.F. Zhu, Y.H. Zhao, and B.G. Liu Phys. Rev. B 78 2008 195206 195214
37. J. Zhang, X.Z. Li, B. Xu, and D.J. Sellmyer Appl. Phys. Lett. 86 2005 212504 212506
38. J.M.D. Coey, A.P. Douvalis, C.B. Fitzgerald, and M. Venkatesan Appl. Phys. Lett. 84 2004 1332 1334
39. M. Roever, J. Malindretos, A.B. Pinto, and A. Rizzi Phys. Rev. B 84 2011 081201 081205