Solution-processed low leakage organic field-effect transistors with self-pattern registration based on patterned dielectric barrier

Organic Electronics

Volumn 13, Issue 5, 2012, Pages 778-783

  Keum, Chang Min ^a   Bae, Jin Hyuk ^a   Kim, Min Hoi ^a   Choi, Wonsuk ^a   Lee, Sin Doo ^a  

^a Seoul National University   (South Korea)

Author keywords

Leakage reduction; Organic field effect transistor; Patterned dielectric barrier; Selective wettability; Solution processed

Indexed keywords

DIELECTRIC MATERIALS; DRAIN CURRENT; LEAKAGE CURRENTS; ORGANIC POLYMERS; REFRACTORY METAL COMPOUNDS; WETTING;

FLUORINATED POLYMERS; GEOMETRICAL CONFINEMENT; LEAKAGE REDUCTION; LOW-LEAKAGE CURRENT; PATTERNED DIELECTRIC; SOLUTION PROCESSED ORGANIC FIELD-EFFECT TRANSISTORS; SOLUTION-PROCESSED; TRANSFER PRINTING;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84862780925     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2012.02.003     Document Type: Article

References (26)

1. H.E. Katz, A.J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y.-Y. Lin, and A. Dodabalapur Nature 404 2000 478
2. H. Sirringhaus, T. Kawase, R.H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E.P. Woo Science 290 2000 2123
3. H. Sirringhaus Adv. Mater. 17 2005 2411
4. J.E. Anthony, J.S. Brooks, D.L. Eaton, and S.R. Parkin J. Am. Chem. Soc. 123 2001 9482
5. J. Zhang, J. Wang, H. Wang, and D. Yan Appl. Phys. Lett. 84 2004 142
6. X.-H. Zhang, S.P. Tiwari, and B. Kippelen Org. Electron. 10 2009 1133
7. T. Sekitani, Y. Noguchi, U. Zschieschang, H. Klauk, and T. Someya Proc. Natl. Acad. Sci. USA 105 2004 4976
8. R.W.I. de Boer, N.N. Iosad, A.F. Stassen, T.M. Klapwijk, and A.F. Morpurgo Appl. Phys. Lett. 86 2005 032103
9. F.-C. Chen, C.-W. Chu, J. He, Y. Yang, and J.-L. Lin Appl. Phys. Lett. 85 2004 3295
10. G. Wang, D. Moses, A.J. Heeger, H.-M. Zhang, M. Narasimhan, and R.E. Demaray J. Appl. Phys. 95 2004 316
11. M. Egginger, M. Irimia-Vladu, R. Schwödiauer, A. Tanda, I. Frischauf, S. Bauer, and N.S. Sariciftci Adv. Mater. 20 2008 1018
12. J.-M. Kim, J.-W. Lee, J.-K. Kim, J.-S. Kim, Y.-H. Lee, M.-H. Oh, and B.-K. Ju Appl. Phys. Lett. 85 2004 6368
13. Y. Jang, D.H. Kim, Y.D. Park, J.H. Cho, M. Hwang, and K. Cho Appl. Phys. Lett. 88 2006 072101
14. D.K. Hwang, K. Lee, J.H. Kim, C.S. Kim, H.K. Baik, J.H. Park, E. Kim, and S. Im Appl. Phys. Lett. 88 2006 243513
15. H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik Nature 445 2007 745
16. M.-H. Yoon, H. Yan, A. Facchetti, and T.J. Marks J. Am. Chem. Soc. 127 2005 10388
17. S.H. Ko, H. Pan, C.P. Grigoropoulos, C.K. Luscombe, J.M.J. Fréchet, and D. Poulikakos Nanotechnology 18 2007 345202
18. D.R. Hines, S. Mezhenny, M. Breban, V.W. Ballarotto, G. Esen, A. Southard, M.S. Fuhrer, and E.D. Williams Appl. Phys. Lett. 86 2005 163101
19. J.-F. Chang, and H. Sirringhaus Adv. Mater. 21 2009 2530
20. H.S. Lee, D. Kwak, W.H. Lee, J.H. Cho, and K. Cho J. Phys. Chem. C 114 2010 2329
21. K.-J. Chang, F.-Y. Yang, C.-C. Liu, M.-Y. Hsu, T.-C. Liao, and H.-C. Cheng Org. Electron. 10 2009 815
22. S.C.B. Mannsfeld, A. Sharei, S. Liu, M.E. Roberts, I. McCulloch, M. Heeney, and Z. Bao Adv. Mater. 20 2008 4044
23. S. Li, W. Chen, D. Chu, and S. Roy Adv. Mater. 23 2011 4107
24. S.H. Lee, M.H. Choi, S.H. Han, D.J. Choo, J. Jang, and S.K. Kwon Org. Electron. 9 2008 721
25. W. Choi, M.-H. Kim, Y.-J. Na, and S.-D. Lee Org. Electron. 11 2010 2026
26. K.D. Kim, and C.K. Song Appl. Phys. Lett. 88 2006 233508