SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 41, Issue 6, 2012, Pages 1476-1480

New layered intergrowths in the Sn-Mo-Se system

(7) Beekman, M a,d Cogburn, G a Heideman, C a,e Rouvimov, S b Zschack, P c Neumann, W a Johnson, D C a

a UNIVERSITY OF OREGON (United States)

b PORTLAND STATE UNIVERSITY (United States)

c ARGONNE NATIONAL LABORATORY (United States)

d OREGON INSTITUTE OF TECHNOLOGY (United States)

e EASTERN OREGON UNIVERSITY (United States)

Author keywords

intergrowth; modulated elemental reactants; novel materials; semiconductor; synthesis; Thermoelectric; thin film

Indexed keywords

CHALCOGENIDE COMPOUND; ELECTRICAL TRANSPORT; IN-PLANE DIFFRACTION; INDIVIDUAL COMPONENTS; INTER-GROWTHS; INTERGROWTH; MIS-ORIENTATION; MODULATED ELEMENTAL REACTANTS; MOLYBDENUM DISELENIDE; NANOLAMINATE; NOVEL MATERIALS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTING BEHAVIOR; STRUCTURAL MISFITS; SYNCHROTRON X RAY DIFFRACTION; THERMOELECTRIC; TURBOSTRATIC; X RAY REFLECTIVITY;

ELECTRON PROBE MICROANALYSIS; MOLYBDENUM; PHASE CHANGE MEMORY; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL); THIN FILMS; TIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84862780438 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-012-1971-3 Document Type: Article

Times cited : (25)

References (12)

1
- 52749097196
- 10.1016/j.jssc.2008.06.017 1:CAS:528:DC%2BD1cXptVSksbk%3D
- C Heideman N Nguyen J Hanni Q Lin S Duncombe DC Johnson P Zschack 2008 J. Solid State Chem. 181 1701 10.1016/j.jssc.2008.06.017 1:CAS:528: DC%2BD1cXptVSksbk%3D
- (2008) J. Solid State Chem. , vol.181 , pp. 1701
- Heideman, C.¹ Nguyen, N.² Hanni, J.³ Lin, Q.⁴ Duncombe, S.⁵ Johnson, D.C.⁶ Zschack, P.⁷

2
- 53249121854
- 10.1002/ejic.200800158
- Q Lin CL Heideman N Nguyen P Zschack C Chiritescu DG Cahill DC Johnson 2008 Eur. J. Inorg. Chem. 2008 2382 10.1002/ejic.200800158
- (2008) Eur. J. Inorg. Chem. , vol.2008 , pp. 2382
- Lin, Q.¹ Heideman, C.L.² Nguyen, N.³ Zschack, P.⁴ Chiritescu, C.⁵ Cahill, D.G.⁶ Johnson, D.C.⁷

3
- 76249110674
- 10.1021/cm901952v 1:CAS:528:DC%2BD1MXhtlWmtbnO
- Q Lin M Smeller CL Heideman P Zschack M Koyano MD Anderson R Kykyneshi DA Keszler IM Anderson DC Johnson 2010 Chem. Mater. 22 1002 10.1021/cm901952v 1:CAS:528:DC%2BD1MXhtlWmtbnO
- (2010) Chem. Mater. , vol.22 , pp. 1002
- Lin, Q.¹ Smeller, M.² Heideman, C.L.³ Zschack, P.⁴ Koyano, M.⁵ Anderson, M.D.⁶ Kykyneshi, R.⁷ Keszler, D.A.⁸ Anderson, I.M.⁹ Johnson, D.C.¹⁰

4
- 0000065773
- 10.1021/cm9601087 1:CAS:528:DyaK28XksFahsL8%3D
- M Noh CD Johnson MD Hornbostel J Thiel DC Johnson 1996 Chem. Mater. 8 1625 10.1021/cm9601087 1:CAS:528:DyaK28XksFahsL8%3D
- (1996) Chem. Mater. , vol.8 , pp. 1625
- Noh, M.¹ Johnson, C.D.² Hornbostel, M.D.³ Thiel, J.⁴ Johnson, D.C.⁵

5
- 0002394004
- 10.1016/0079-6786(95)00007-0 1:CAS:528:DyaK28XhsVWmu78%3D
- GA Wiegers 1996 Prog. Solid State Chem. 24 1 10.1016/0079-6786(95)00007-0 1:CAS:528:DyaK28XhsVWmu78%3D
- (1996) Prog. Solid State Chem. , vol.24 , pp. 1
- Wiegers, G.A.¹

6
- 67650474073
- 10.1007/s11664-009-0679-5 1:CAS:528:DC%2BD1MXnvFKhtLk%3D
- P Zschack C Heideman C Mortensen N Nguyen M Smeller Q Lin DC Johnson 2009 J. Electron. Mater. 38 1402 10.1007/s11664-009-0679-5 1:CAS:528: DC%2BD1MXnvFKhtLk%3D
- (2009) J. Electron. Mater. , vol.38 , pp. 1402
- Zschack, P.¹ Heideman, C.² Mortensen, C.³ Nguyen, N.⁴ Smeller, M.⁵ Lin, Q.⁶ Johnson, D.C.⁷

7
- 49749095148
- 10.1063/1.2967722
- C Chiritescu DG Cahill C Heideman Q Lin C Mortensen NT Nguyen DC Johnson R Rostek H Böttner 2008 J. Appl. Phys. 104 033533 10.1063/1.2967722
- (2008) J. Appl. Phys. , vol.104 , pp. 033533
- Chiritescu, C.¹ Cahill, D.G.² Heideman, C.³ Lin, Q.⁴ Mortensen, C.⁵ Nguyen, N.T.⁶ Johnson, D.C.⁷ Rostek, R.⁸ Böttner, H.⁹

8
- 77952808389
- 10.1063/1.3428577
- A Mavrokefalos Q Lin M Beekman JH Seol YJ Lee H Kong MT Pettes DC Johnson L Shi 2010 Appl. Phys. Lett. 96 181908 10.1063/1.3428577
- (2010) Appl. Phys. Lett. , vol.96 , pp. 181908
- Mavrokefalos, A.¹ Lin, Q.² Beekman, M.³ Seol, J.H.⁴ Lee, Y.J.⁵ Kong, H.⁶ Pettes, M.T.⁷ Johnson, D.C.⁸ Shi, L.⁹

9
- 58949091681
- 10.1524/zkri.1978.148.3-4.295 1:CAS:528:DyaL38Xks1Cmsbc%3D
- H Wiedemeier HG von Schnering 1978 Z. Krist. 148 295 10.1524/zkri.1978. 148.3-4.295 1:CAS:528:DyaL38Xks1Cmsbc%3D
- (1978) Z. Krist. , vol.148 , pp. 295
- Wiedemeier, H.¹ Von Schnering, H.G.²

10
- 24544466879
- 10.1107/S0365110X6300311X
- PB James MT Lavik 1962 Acta Crystallogr. 16 1183 10.1107/ S0365110X6300311X
- (1962) Acta Crystallogr. , vol.16 , pp. 1183
- James, P.B.¹ Lavik, M.T.²

11
- 0003799776
- Academic New York
- A.F. Ioffe, The Physics of Semiconductors (New York: Academic, 1960).
- (1960) The Physics of Semiconductors
- Ioffe, A.F.¹

12
- 81455141760
- 10.1557/jmr.2011.77
- Q Lin S Tepfer C Heideman C Mortensen N Nguyen P Zschack M Beekman DC Johnson 2011 J. Mater. Res. 26 1866 10.1557/jmr.2011.77
- (2011) J. Mater. Res. , vol.26 , pp. 1866
- Lin, Q.¹ Tepfer, S.² Heideman, C.³ Mortensen, C.⁴ Nguyen, N.⁵ Zschack, P.⁶ Beekman, M.⁷ Johnson, D.C.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.