Design and characterization of a room temperature all-solid-state electronic source tunable from 2.48 to 2.75 THz

IEEE Transactions on Terahertz Science and Technology

Volumn 2, Issue 2, 2012, Pages 177-185

  Maestrini, Alain ^a,b   Mehdi, Imran ^c   Siles, José V ^c   Ward, John S ^c,d   Lin, Robert ^c   Thomas, Bertrand ^c,e   Lee, Choonsup ^c   Gill, John ^c   Chattopadhyay, Goutam ^c   Schlecht, Erich ^c   Pearson, John ^c   Siegel, Peter ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b OBSERVATOIRE DE PARIS   (France)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d RAYTHEON COMPANY   (United States)

^e Radiometer Physics GmbH (RPG)   (Germany)

Author keywords

Broadband terahertz (THz) source; frequency multiplier; frequency tripler; local oscillator; planar diode; power combining; Schottky diode; THz; varactor

Indexed keywords

BROADBAND TERAHERTZ; FREQUENCY MULTIPLIER; LOCAL OSCILLATORS; PLANAR DIODE; POWER-COMBINING; SCHOTTKY DIODES; THZ;

BROADBAND NETWORKS; FREQUENCY TRIPLERS; GALLIUM ARSENIDE; MIXERS (MACHINERY); MONOLITHIC INTEGRATED CIRCUITS; POWER AMPLIFIERS; SCHOTTKY BARRIER DIODES; VARACTORS;

SEMICONDUCTING GALLIUM;

EID: 84862777448     PISSN: 2156342X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TTHZ.2012.2183740     Document Type: Article

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