-
1
-
-
0036500775
-
Terahertz technology
-
Mar.
-
P. Siegel, "Terahertz technology," IEEE Trans. Microw. Theory Tech., vol.50, no.3, pp. 910-928, Mar. 2002.
-
(2002)
IEEE Trans. Microw. Theory Tech.
, vol.50
, Issue.3
, pp. 910-928
-
-
Siegel, P.1
-
2
-
-
27844471999
-
Opening the terahertz window with integrated diode circuits
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Oct.
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T. W. Crowe, W. L. Bishop, D. W. Porterfield, J. L. Hesler, and R. M. Weikle, "Opening the terahertz window with integrated diode circuits," IEEE J. Solid State Circuits, vol.40, no.10, pp. 2104-2110, Oct. 2005.
-
(2005)
IEEE J. Solid State Circuits
, vol.40
, Issue.10
, pp. 2104-2110
-
-
Crowe, T.W.1
Bishop, W.L.2
Porterfield, D.W.3
Hesler, J.L.4
Weikle, R.M.5
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3
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47349108884
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Demonstration of a S-MMIC LNA with 16-dB gain at 340-GHz
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Oct.
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W. R. Deal, X. B. Mei, V. Radisic, W. Yoshida, P. H. Liu, J. Uyeda, Barsky, T. Gaier, A. Fung, and R. Lai, "Demonstration of a S-MMIC LNA with 16-dB gain at 340-GHz," in IEEE CSIC Conf. Dig., Oct. 2007, pp. 1-4.
-
(2007)
IEEE CSIC Conf. Dig.
, pp. 1-4
-
-
Deal, W.R.1
Mei, X.B.2
Radisic, V.3
Yoshida, W.4
Liu, P.H.5
Uyeda, J.6
Barsky, T.G.7
Fung, A.8
Lai, R.9
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4
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70349501258
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A 300 GHz mHEMT amplifier module
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May
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A. Tessmann, A. Leuther, V. Hurm, H. Massler, M. Zink, M. Kuri, M. Riessle, R. Losch, M. Schlechtweg, and O. Ambacher, "A 300 GHz mHEMT amplifier module," in IEEE IRPM Conf. Dig., May 2009, pp. 196-199.
-
(2009)
IEEE IRPM Conf. Dig.
, pp. 196-199
-
-
Tessmann, A.1
Leuther, A.2
Hurm, V.3
Massler, H.4
Zink, M.5
Kuri, M.6
Riessle, M.7
Losch, R.8
Schlechtweg, M.9
Ambacher, O.10
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5
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36749103786
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Demonstration of a 311-GHz fundamental oscillator using InP HBT technology
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Nov.
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V. Radisic, D. Sawdai, D. Scott, W. R. Deal, L. Dang, D. Li, A. Fung, L. Samoska, T. Gaier, and R. Lai, "Demonstration of a 311-GHz fundamental oscillator using InP HBT technology," IEEE Microw. Wireless Compon. Lett., vol.55, no.11, pp. 2329-2335, Nov. 2007.
-
(2007)
IEEE Microw. Wireless Compon. Lett.
, vol.55
, Issue.11
, pp. 2329-2335
-
-
Radisic, V.1
Sawdai, D.2
Scott, D.3
Deal, W.R.4
Dang, L.5
Li, D.6
Fung, A.7
Samoska, L.8
Gaier, T.9
Lai, R.10
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6
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41649087635
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Demonstration of 184 and 255-GHz amplifiers using InP HBT technology
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Apr.
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V. Radisic, D. Sawdai, D. Scott, W. R. Deal, L. Dang, D. Li, A. Cavus, A. Andy, Fung, L. Samoska, R. To, T. Gaier, and R. Lai, "Demonstration of 184 and 255-GHz amplifiers using InP HBT technology," IEEE Microw. Wireless Compon. Lett., vol.18, no.4, pp. 281-283, Apr. 2008.
-
(2008)
IEEE Microw. Wireless Compon. Lett.
, vol.18
, Issue.4
, pp. 281-283
-
-
Radisic, V.1
Sawdai, D.2
Scott, D.3
Deal, W.R.4
Dang, L.5
Li, D.6
Cavus, A.7
Andy, A.8
Samoska, F.L.9
To, R.10
Gaier, T.11
Lai, R.12
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7
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57349182557
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250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz
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Jun.
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J. Hacker,M. Urteaga, D. Mensa, R. Pierson, M. Jones, Z. Griffith, and M. Rodwell, "250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz," in IEEE MTT-S Int. Dig., Jun. 2008, pp. 403-406.
-
(2008)
IEEE MTT-S Int. Dig.
, pp. 403-406
-
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Hacker, J.1
Urteaga, M.2
Mensa, D.3
Pierson, R.4
Jones, M.5
Griffith, Z.6
Rodwell, M.7
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8
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48649087261
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Sub 50 nm InP HEMT device with Fmax greater than 1 THz
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Dec.
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R. Lai, X. B. Mei, W. R. Deal, W. Yoshida, Y. M. Kim, P. H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, and A. Fung, "Sub 50 nm InP HEMT device with Fmax greater than 1 THz," in IEEE IEDM Conf. Dig., Dec. 2007, pp. 609-611.
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(2007)
IEEE IEDM Conf. Dig.
, pp. 609-611
-
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Lai, R.1
Mei, X.B.2
Deal, W.R.3
Yoshida, W.4
Kim, Y.M.5
Liu, P.H.6
Lee, J.7
Uyeda, J.8
Radisic, V.9
Lange, M.10
Gaier, T.11
Samoska, L.12
Fung, A.13
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9
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45249114166
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A submillimeterwave HEMT amplifier module with integrated waveguide transitions operating above 300 GHz
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Jun.
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L. Samoska, W. R. Deal, G. Chattopadhyay, D. Pukala, A. Fung, T. Gaier, M. Soria, V. Radisic, X. B. Mei, and R. Lai, "A submillimeterwave HEMT amplifier module with integrated waveguide transitions operating above 300 GHz," IEEE Trans. Microw. Theory Tech., vol.56, no.6, pp. 1380-1388, Jun. 2008.
-
(2008)
IEEE Trans. Microw. Theory Tech.
, vol.56
, Issue.6
, pp. 1380-1388
-
-
Samoska, L.1
Deal, W.R.2
Chattopadhyay, G.3
Pukala, D.4
Fung, A.5
Gaier, T.6
Soria, M.7
Radisic, V.8
Mei, X.B.9
Lai, R.10
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10
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67650435804
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A 340-380 GHz integrated CB-CPW-to-waveguide transition for sub millimeter-wave MMIC Packaging
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Jun.
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K. Leong, W. R. Deal, V. Radisic, X. B. Mei, J. Uyeda, L. Samoska, A. Fung, T. Gaier, and R. Lai, "A 340-380 GHz integrated CB-CPW-to-waveguide transition for sub millimeter-wave MMIC Packaging," IEEE Microw. Wireless Compon. Lett., vol.19, no.6, pp. 413-415, Jun. 2009.
-
(2009)
IEEE Microw. Wireless Compon. Lett.
, vol.19
, Issue.6
, pp. 413-415
-
-
Leong, K.1
Deal, W.R.2
Radisic, V.3
Mei, X.B.4
Uyeda, J.5
Samoska, L.6
Fung, A.7
Gaier, T.8
Lai, R.9
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