Formation of porous SiC ceramics via recrystallization

Journal of the European Ceramic Society

Volumn 32, Issue 13, 2012, Pages 3611-3615

  Kim, Youngseok ^a   Min, Kyungseok ^a   Shim, Jiin ^a   Kim, Deug J ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Grain growth; Porosity; Porous ceramics; SiC; Strength

Indexed keywords

INTERCONNECTED NETWORK; MEAN PORE SIZE; POROUS CERAMICS; POROUS SIC; SIC; SIC POWDER; SINTERED SPECIMEN; STRENGTH;

CERAMIC MATERIALS; GRAIN GROWTH; PLATES (STRUCTURAL COMPONENTS); POROSITY; SINTERING;

SILICON CARBIDE;

EID: 84862683030     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2012.04.044     Document Type: Article

References (20)

1. Kim Y.W., Lee J.G. Reactive sintering of SiC. J Kor Ceram Soc 1983, 20:115-122.
2. Whang S.S., Park S.W., Han H.H., Han K.S., Kim C.M. Mechanical properties of porous reaction bonded silicon carbide. J Kor Ceram Soc 2002, 39:948-954.
3. Wu W., Fujiju T., Messing G.L. Synthesis of cellular inorganic materials by foaming sol-gels. J Mater Sci 1999, 34:3189-3202.
4. Lange F.F., Miller K.T. Open cell, low-density ceramics fabricated from reticulated polymer substrates. Adv Ceram Mater 1987, 2:827-831.
5. Fukushima M., Nakata M., Zhou Y., Ohji T., Yoshizawa Y.-i. Fabrication and properties of ultra highly porous silicon carbide by the gelation-freezing method. J Eur Ceram Soc 2010, 30:2889-2896.
6. 2 as a foaming agent via high-temperature recerystallization. Mater Sci Eng 2011, 528:2418-2422.
7. Eom J.H., Kim Y.W., Song I.H., Kim H.D. Processing and properties of polysiloxane-derived porous silicon carbide ceramics using hollow microspheres as templates. J Eur Ceram Soc 2008, 28:1029-1035.
8. Atanu Dey A., Kayal N., Chakrabarti O. Preparation of porous SiC ceramics by and infiltration technique. Ceram Int 2011, 37:223-230.
9. Liu R.Z., Wang B., Cheng J.K., Yang J.F., Gao J.Q. A novel method for the preparation of porous SiC. Mater Sci Forum 2009, 620-622:773-776.
10. Tanaka H., Iyi N. Simple calculation of SiC polytype contents from powder X-ray diffraction peaks. J Ceram Soc Jpn 1993, 101(11):1313-1314.
11. Ruska J., Gauckler L.J., Lorenz J., Rexer H.U. The quantitative calculation of SiC polytypes from measurements of X-ray diffraction peak intensities. J Mater Sci 1979, 13:2013-2017.
12. Kang S.-j.L. Sintering: Densification, Grain Growth & Microstructure 2005, Butterworth-Heineman, Boston, pp. 48-49.
13. Kakimoto K., Gao B., Shiramomo T., Nakano S., Nishizawa S.-i. Thermodynamic analysis of SiC polytype growth by physical vapor transport method. J Cryst Growth 2011, 324:78-81.
14. Lilov S.K. Study of the equilibrium processes in the gas phase during silicon carbide sublimation. Mater Sci Eng 1993, B21:65-69.
15. Singhal S.C. Thermodynamic analysis of the high temperature stability of silicon nitride and silicon carbide. Ceram Int 1976, 2:123-130.
16. Kong P., Huang T.T., Pfender E. Synthesis of ultrafine silicon carbide powders in thermal arc plasmas. IEEE Trans Plasma Sci 1986, PS-14:357-369.
17. 2 with Si on the 4H-SiC (000-1) surface. Mater Sci Forum 2006, 527-529:235-238.
18. Sugiyama S., Togaya M. Phase relationship between 3C- and 6H-silicon carbide at high pressure and high temperature. J Am Ceram Soc 2001, 84(12):3013-3016.
19. Jacobson N.S., Lee K.N., Fox D.S. Reactions of silicon carbide and silicon(IV) oxide at elevated temperatures. J Am Ceram Soc 1992, 75(6):1603-1611.
20. Lilov S.K. Thermodynamic analysis of phase transformations at the dissociative evaporation of silicon carbide polytypes. Diam Relat Mater 1995, 4:1331-1334.