Ab initio studies of the surface reaction of Si2C and SiC 2 with Si on the 4H-SiC (000-1) surface

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 235-238

  Yamaguchi, Hiroki ^a   Sakiyama, Yukinori ^a   Makino, Emi ^b   Onda, Shoichi ^b   Matsumoto, Yoichiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

4H SiC; Crystal growth; Polytypism; Si2C; SiC2; Surface reaction

Indexed keywords

ACTIVATION ENERGY; APPROXIMATION THEORY; CRYSTAL GROWTH; DENSITY FUNCTIONAL THEORY; FREE RADICALS; SURFACE REACTIONS;

AB INITIO STUDIES; ACTIVATION BARRIERS; POLYTYPES; POLYTYPISM; PROJECTOR AUGMENTED WAVE-GENERALIZED GRADIENT APPROXIMATION;

SILICON CARBIDE;

EID: 37849004340     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.235     Document Type: Conference Paper

References (12)

1. V. Heine, C. Cheng and R. J. Needs: Mater. Sci. Eng. B 11 (1992), p.55
2. S. Limpijumnong and W. R. L. Lambrecht: Phys. Rev. B 57 (1998), p. 12017
3. J. Olander and K. Larsson: J. Phys. Chem. B 105 (2001), p.7619
4. G. Kresse and J. Hafner: Phys. Rev. B 47 (1993), p.558
5. G. Kresse and J. Joubert: Phys. Rev. B 59 (1999), p. 1758
6. G. Mills and H. Jonsson: Phys. Rev. Lett. 72 (1994), p.1124
7. Z. H. Kafafi, R. H. Hauge, L. Fredin and J. L. Margrave: J. Phys. Chem. 87 (1983), p.797
8. A. Spielfiedel, S. Carter, N. Feautrier, G. Chambaud and P. Rosmus: J. Phys. Chem. 100 (1996), p. 10055
9. J. Cernicharo, M. Guelin, C. Kahane, M. Bogey, C. Demuynck and J. L. Destombes: Astron. Astrophys. 246 (1991), p.213
10. S. Arulmozhiraja, P. Kolandaivel and O. Ohashi: J. Phys. Chem. A 103 (1999), p.3073
11. A. Bauer, J. Kräußlich, L. Dressler, P. Kuschnerus, J. Wolf, K. Goetz, P. Käckell, J. Furthmüller and F. Bechstedt: Phys. Rev. B 57 (1998), p.2647
12. C. Raffy, L. Magaud, E. Blanquet, M. Pons and A. Pasturel: Mater. Sci. Forum 353-356 (2000). p.111