Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems

Physical Review Letters

Volumn 93, Issue 3, 2004, Pages

  Yamaguchi, H ^a   Tokura, Y ^a   Miyashia, S ^b   Hirayama, Y ^a,c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SYSTEMS; ENERGY BAND; MAGNETORESISTANCE (MR); PIEZORESISTANCE (PR);

ACTUATORS; BAND STRUCTURE; CANTILEVER BEAMS; ELECTRIC POTENTIAL; FERMI LEVEL; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OSCILLATIONS; QUANTUM INTERFERENCE DEVICES; RESONANCE; SCATTERING; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

INDIUM COMPOUNDS;

EID: 84862406270     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.036603     Document Type: Article

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