Transport property tuned by gate irradiation in Zno nanotetrapod devices

Journal of Physical Chemistry C

Volumn 116, Issue 23, 2012, Pages 12397-12400

  Wang, Wenhua ^a   Qi, Junjie ^a   Qin, Zi ^a   Wang, Qinyu ^a   Sun, Xu ^a   Zhang, Yue ^a,b  

^a School of Materials Science and Engineering University of School and Technology Beijing   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL NUCLEI; CURRENT RESPONSE; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON-BEAM IRRADIATIONS; IV CHARACTERISTICS; NANOTETRAPODS; SCHOTTKY CONTACTS; SEMICONDUCTOR OPTOELECTRONIC DEVICES; TIME-DEPENDENT CURRENTS; ZINC OXIDE (ZNO); ZNO;

ELECTRIC PROPERTIES; IRRADIATION; OPTOELECTRONIC DEVICES; ZINC OXIDE;

TRANSPORT PROPERTIES;

EID: 84862270324     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp210934f     Document Type: Article

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