Effect of defects in ferromagnetic C doped ZnO thin films

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 6, 2012, Pages 1254-1257

  Subramanian, Munisamy ^a   Akaike, Yuhei ^a   Hayashi, Yasuhiko ^a   Tanemura, Masaki ^a   Ebisu, Hiroshi ^a   Ping, Daniel Lau Shu ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Defects; Magnetic properties; Magnetic semiconductors; SQUID; Zinc oxide

Indexed keywords

CARBON; CHARGE TRANSFER; DEFECTS; FERROMAGNETIC MATERIALS; II-VI SEMICONDUCTORS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OXIDE MINERALS; OXYGEN; SQUIDS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

C-DOPED ZNO; CARBON-CARBON INTERACTION; FERRO-MAGNETIC INTERACTIONS; INTRINSIC DEFECTS; MAGNETIC INTERACTIONS; ORBITALS; ROOM TEMPERATURE FERROMAGNETISM (RTFM);

FERROMAGNETISM;

EID: 84862186986     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201147609     Document Type: Article

References (20)

1. F. Pan, C. Song, X. J. Liu, Y. C. Yang, and F. Zeng, Mater. Sci. Eng. R 62, 1 (2008).
2. H. Pan, J. B. Yi, L. Shen, R. Q. Wu, J. H. Yang, J. Y. Lin, Y. P. Feng, J. Ding, L. H. Van, and J. H. Yin, Phys. Rev. Lett. 99, 127201 (2007).
3. T. S. Herng, S. P. Lau, L. Wang, B. C. Zhao, S. F. Yu, M. Tanemura, A. Akaike, and K. S. Teng, Appl. Phys. Lett. 95, 012505 (2009).
4. T. S. Herng, S. P. Lau, C. S. Wei, L. Wang, B. C. Zhao, M. Tanemura, and Y. Akaike, Appl. Phys. Lett. 95, 133103 (2009).
5. S. Zhou, Q. Xu, K. Potzger, G. Talut, R. Grötzsche, J. Fassbender, M. Vinnichenko, J. Grenzer, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, and H. Schmidt, Appl. Phys. Lett. 93, 232507 (2008).
6. X. Wang, X. Chen, R. Dong, Y. Huang, and W. Lu, Phys. Lett. A 373, 3091 (2009).
7. S. Akbar, S. K. Hasanain, M. Abbas, S. Ozcan, B. Ali, and S. Ismat Shah, Solid State Commun. 151, 17 (2011).
8. X.-L. Li, J.-F. Guo, Z.-Y. Quan, X.-H. Xu, and G. A. Gehring, IEEE Trans. Magn. 46, 1382 (2010).
9. J. W. Park, D. H. Kim, S.-H. Choi, M. Lee, and D. Lim, J. Korean Phys. Soc. 57, 1482 (2010).
10. H. Liu, X. Zhang, L. Y. Li, Y. X. Wang, K. H. Gao, Z. Q. Li, R. K. Zheng, S. P. Ringer, B. Zhang, and X. X. Zhang, Appl. Phys. Lett. 91, 072511 (2007).
11. B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Kashiwaba, and K. Haga, Nanotechnology 15, S382 (2004).
12. A. Ghosh and R. N. P. Choudhary, J. Appl. Phys. 105, 124906 (2009).
13. J. Alaria, P. Turek, M. Bernard, M. Bouloudenine, A. Berbadj, N. Brihi, G. Schmerber, S. Colis, and A. Dinia, Chem. Phys. Lett. 415, 337 (2005).
14. P. Jakes and E. Erdem, Phys. Status Solidi RRL 5, 56 (2011).
15. D. Galland and A. Herve, Phys. Lett. A 33, 1 (1970).
16. N. G. Romanov, D. O. Tolmachev, A. G. Badalyan, R. A. Babunts, P. G. Baranov, and V. V. Dyakonov, Phys. B 404, 4783 (2009).
17. L. S. Vlasenko and G. D. Watkins, Phys. Rev. B 71, 125210 (2005).
18. G. Z. Xing, Y. H. Lu, Y. F. Tian, J. B. Yi, C. C. Lim, Y. F. Li, G. P. Li, D. D. Wang, B. Yao, J. Ding, Y. P. Feng, and T. Wu, AIP Adv. 1, 022152 (2011).
19. S. Chattopadhyay, S. Dutta, D. Jana, S. Chattopadhyay, A. Sarkar, P. Kumar, D. Kanjilal, D. K. Mishra, and S. K. Ray, J. Appl. Phys. 107, 113516 (2010).
20. B. J. Nagare, S. Chacko, and D. G. Kanhere, J. Phys. Chem. A 114, 2689 (2010).