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Volumn 22, Issue 25, 2012, Pages 12695-12700
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A ZnO/N-doped carbon nanotube nanocomposite charge transport layer for high performance optoelectronics
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND GAP ENERGY;
CHARGE TRANSPORT LAYER;
CHARGE TRANSPORT MATERIALS;
CHEMICALLY DOPED;
DEVICE PERFORMANCE;
EFFECTIVE CHARGE;
ELECTRICAL CONDUCTIVITY;
ELECTRON HOLE;
ELECTRON TRANSPORT LAYERS;
ELECTRON-DEFICIENT;
ELECTRON-RICH;
INHERENT LIMITATIONS;
INTERFACIAL CHARGE;
MAXIMUM LUMINANCE;
METAL OXIDES;
N-DOPED;
OPTICAL TRANSPARENCY;
ORGANIC OPTOELECTRONICS;
PROCESSABILITY;
PURE ZNO;
SOLUTION PROCESSABLE;
TRANSPORT ENHANCEMENTS;
TRANSPORT LAYERS;
WIDE BAND GAP;
ZNO;
ELECTRIC CONDUCTIVITY;
ELECTRON MOBILITY;
ENERGY GAP;
METALLIC COMPOUNDS;
NANOCOMPOSITES;
WORK FUNCTION;
ZINC OXIDE;
LIGHT EMITTING DIODES;
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EID: 84862181903
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/c2jm30710c Document Type: Article |
Times cited : (85)
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References (45)
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