The variation of Curie temperature and dielectric relaxor behaviour in the nominal (1-x)BaTiO 3-xBiAlO 3 system

Journal of Electroceramics

Volumn 28, Issue 2-3, 2012, Pages 105-108

  Hou, Yu Dong ^a   Cui, Lei ^a   Si, Mei Ju ^a   Ge, Hai Yan ^a   Zhu, Man Kang ^a   Yan, Hui ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Ceramics; Defects; Dielectric properties; Microstructure

Indexed keywords

BATIO; BINARY SYSTEMS; CERAMICS; CONVENTIONAL METHODS; DIELECTRIC RELAXOR; HIGH CURIE TEMPERATURE; PURE PEROVSKITE PHASE; RELAXOR BEHAVIOR; VEGARD'S LAW;

CURIE TEMPERATURE; DEFECTS; DIELECTRIC PROPERTIES; EXPERIMENTS; MICROSTRUCTURE; PEROVSKITE;

BARIUM COMPOUNDS;

EID: 84862165710     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-012-9689-4     Document Type: Article

References (20)

1. P. Baettig, C.F. Schelle, R. LeSar, U.V. Waghmare, N.A. Spaldin, Chem Mater 17, 1376 (2005). doi:10.1021/cm0480418
2. A.A. Belik, T. Wuernisha, T. Kamiyama, K. Mori, M. Maie, T. Nagai, Y. Matsui, E.T. Muromachi, Chem Mater 18, 133 (2006). doi:10.1021/cm052020b
3. J. Zylberberg, AA. Belik, E.T. Muromachi, Z.G. Ye, Chem Mater 19, 6385 (2007). doi:10.1021/cm071830f
4. R.V.K. Mangalam, S.V. Bhat, A. Iyo, Y. Tanaka, A. Sundaresan, C. N.R. Rao, Solid State Commun 146, 435 (2008). doi:10.1016/j. ssc.2008.03.039
5. N.N. Wu, Y.D. Hou, C. Wang, M.K. Zhu, X.M. Song, H. Yan, J Appl Phys 105, 084107 (2009). doi:10.1063/1.3106664
6. L.Y. Zhao, Y.D. Hou, L.M. Chang, M.K. Zhu, H. Yan, J Mater Res 24, 2029 (2009). doi:10.1557/JMR.2009.0246
7. H.C. Yu, Z.G. Ye, J Appl Phys 103, 034114 (2008). doi:10.1063/ 1.2838479
8. H.C.Yu,Z.G.Ye,Appl Phys Lett93, 112902(2008).doi:10.1063/ 1.2967335
9. R.Z. Zuo, D.Y. Lv, J. Fu, Y. Liu, L.T. Li, J Alloy Compd 476, 836 (2009). doi:10.1016/j.jallcom.2008.09.123
10. A.K. Kalyani, R. Garg, R. Ranjan, Appl Phys Lett 94, 202903 (2009). doi:10.1063/1.3136855
11. C. Aragó, C.L. Wang, JA. Gonzalo, Ferroelectrics 337, 233 (2006). doi:10.1080/00150190600717042
12. N. Vittayakorn, G. Rujijanagul, X. Tan, MA. Marquardt, D.P. Cann, J Appl Phys 96, 5103 (2004). doi:10.1063/1.1796511
13. N. Vittayakorn, G. Rujijanagul, X. Tan, H. He, MA. Marquardt, D.P. Cann, J Electroceram 16,141 (2006). doi:10.1007/s10832-006-4927-2
14. Y.P. Guo, K. Kakimoto, H. Ohsato, Appl Phys Lett 85, 4121 (2004). doi:10.1063/1.1813636
15. Y.D. Hou, M.K. Zhu, F. Gao, H. Wang, B. Wang, H. Yan, C.S. Tian, J Am Ceram Soc 87, 847 (2004)
16. M. Okada, T. Yoshimura, A. Ashida, N. Fujimura, Jpn J Appl Phys 43, 6609 (2004). doi:10.1143/JJAP43.6609
17. SJ. Lee, S.M. Park, Y.H. Han, Jpn J Appl Phys 48, 031403 (2009). doi:10.1143/JJAP48.031403
18. S. Mahajan, O.P. Thakur, D.K. Bhattacharya, K. Sreenivas, J Phys D: Appl Phys 42, 065413 (2009). doi:10.1088/0022-3727/42/6/065413
19. R.D. Shannon, C.T. Prewitt, Acta Cryst B25, 925 (1969)
20. Y.D. Hou, L.M. Chang, M.K. Zhu, X.M. Song, H. Yan, J Appl Phys 102, 084507 (2007). doi:10.1063/1.2800264