Microstructure and electrical properties of 0.5PZN-0.5PZT relaxor ferroelectrics close to the morphotropic phase boundary

Journal of Materials Research

Volumn 24, Issue 6, 2009, Pages 2029-2034

  Zhao, Lu Yang ^a   Hou, Yu Dong ^a   Chang, Li Min ^a   Zhu, Man Kang ^a   Yan, Hui ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS LAW; DC CONDUCTIVITY; DC RESISTIVITY; DIELECTRIC STUDIES; ELECTRICAL PROPERTY; HIGH TEMPERATURE RANGE; LINEAR FITTING; MORPHOTROPIC PHASE BOUNDARIES; OXIDE-MIXING METHOD; PIEZOELECTRIC PROPERTY; POLARIZATION DIRECTION; PZT; PZT CERAMICS; RELAXOR FERROELECTRIC; RELAXORS; RHOMBOHEDRAL PHASE; TEM; TETRAGONAL PHASE;

ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; LEAD; NIOBIUM; OXYGEN; OXYGEN VACANCIES; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; RAMAN SPECTROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC; ZIRCONIUM;

ACTIVATION ENERGY;

EID: 68149122199     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0246     Document Type: Article

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