Investigation of stability of the pH-sensitive field-effect transistor characteristics

Sensor Letters

Volumn 9, Issue 6, 2011, Pages 2392-2396

  Pavluchenko, A S ^a   Kukla, A L ^a   Goltvianskyi, Yu V ^a   Soldatkin, O O ^b   Arkhypova, V M ^b   Dzyadevych, S V ^b   Soldatkin, A P ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF MOLECULAR BIOLOGY AND GENETICS   (Ukraine)

Author keywords

Drift; Ion Selective Field Effect Transistor; Silicon Nitride; Threshold Voltage

Indexed keywords

CHANNEL AREA; CONTINUOUS MEASUREMENTS; DESIGN AND TECHNOLOGY; DRIFT; EXPERIMENTAL DATA; ION-SELECTIVE FIELD EFFECT TRANSISTORS; NEGATIVE VOLTAGE; PH SENSITIVE; TWO LAYERS;

GATE DIELECTRICS; SILICON NITRIDE; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 84862005663     PISSN: 1546198X     EISSN: 15461971     Source Type: Journal    
DOI: 10.1166/sl.2011.1797     Document Type: Conference Paper

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