Formation of boron-nitride ultra-thin films on Si(111)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 6, 2012, Pages 1450-1453

  Shimoyama, Iwao ^a   Baba, Yuji ^a   Sekiguchi, Tetsuhiro ^a   Nath, Krishna G ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Boron nitride; NEXAFS; Silicon; Ultra thin film

Indexed keywords

BN FILMS; BORAZINE; DENSITY FUNCTIONAL THEORY CALCULATIONS; HEXAGONAL BORON NITRIDE; INTRINSIC ELECTRONICS; LOW ENERGY REGIONS; MONOLAYER FILM; NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPIES; NEXAFS; PHYSISORBED; POLARIZATION DEPENDENCE; SI (1 1 1); SI SUBSTRATES; SI(111) SUBSTRATE; STRUCTURE AND ORIENTATION; XPS ANALYSIS;

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; DENSE WAVELENGTH DIVISION MULTIPLEXING; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; MONOLAYERS; NITRIDES; PHOTOELECTRONS; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 84862001716     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100665     Document Type: Article

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