CMOS direct time interval measurement of long-lived luminescence lifetimes

Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS

Volumn , Issue , 2011, Pages 5-9

  Yao, Lei ^a   Yung, Ka Yi ^b   Cheung, Maurice C ^a   Chodavarapu, Vamsy P ^a   Bright, Frank V ^b  

^a MCGILL UNIVERSITY   (Canada)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENCE; METALS; MOS DEVICES; OPERATIONAL AMPLIFIERS; OXIDE SEMICONDUCTORS; RANGE FINDING; SOL-GELS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; EMISSION LIFETIME; LUMINESCENCE EMISSION; LUMINESCENCE LIFETIME; OPTICAL CHEMICAL SENSORS; PROCESS FUNCTIONS; TIME INTERVAL MEASUREMENTS; TIME-TO-DIGITAL;

CMOS INTEGRATED CIRCUITS;

ARTICLE; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; GENETIC PROCEDURES; LUMINESCENCE; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LUMINESCENT MEASUREMENTS; MOLECULAR PROBE TECHNIQUES; REPRODUCIBILITY OF RESULTS; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY;

EID: 84861947499     PISSN: 1557170X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEMBS.2011.6089883     Document Type: Conference Paper

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