Dry etch damage and recovery of gallium indium zinc oxide thin-film transistors with etch-back structures

Displays

Volumn 33, Issue 3, 2012, Pages 133-135

  Park, Jae Chul ^a   Lee, Ho Nyeon ^b  

^a Yonsei University   (South Korea)

^b Soonchunhyang University   (South Korea)

Author keywords

Damage; Gallium indium zinc oxide; Recovery; Thin film transistor

Indexed keywords

ASHING PROCESS; CONDUCTIVE SURFACES; DAMAGE; DRY ETCH DAMAGE; DRY ETCH PROCESS; FABRICATION PROCESS; FIELD-EFFECT MOBILITIES; GALLIUM INDIUM ZINC OXIDES; PLASMA TREATMENT; SUBTHRESHOLD SWING; SWITCHING PERFORMANCE; THIN-FILM TRANSISTOR (TFTS); WET-ETCH;

DEGRADATION; DRY ETCHING; GALLIUM; PLASMA APPLICATIONS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; WET ETCHING;

RECOVERY;

EID: 84861861283     PISSN: 01419382     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.displa.2012.05.001     Document Type: Article

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