Electronic effects of Se and Pb dopants in TlBr

Applied Physics Letters

Volumn 100, Issue 20, 2012, Pages

  Smith III, Holland M ^a,b   Phillips, David J ^c   Sharp, Ian D ^a   Beeman, Jeffrey W ^a   Chrzan, Daryl C ^a,b   Haegel, Nancy M ^c   Haller, Eugene E ^a,b   Ciampi, Guido ^d   Kim, Hadong ^d   Shah, Kanai S ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California Berkeley   (United States)

^c NAVAL POSTGRADUATE SCHOOL   (United States)

^d RADIATION MONITORING DEVICES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; CONDUCTIVITY TRANSIENTS; DEEP LEVEL; ELECTRONIC EFFECTS; MICROWAVE REFLECTIVITY; PHOTO-INDUCED;

LEAD;

DOPING (ADDITIVES);

EID: 84861837359     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4712596     Document Type: Article

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