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Applied Physics Letters

Volumn 100, Issue 20, 2012, Pages

Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy

(8) Gaowei, M a Muller, E M a Rumaiz, A K b Weiland, C c Cockayne, E c Jordan Sweet, J d Smedley, J b Woicik, J C c

a STONY BROOK UNIVERSITY (United States)

b BROOKHAVEN NATIONAL LABORATORY (United States)

c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

d IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING CONTACTS; CARRIER INJECTION; CROSS SECTION; DENSITY OF STATE; DIAMOND DEVICES; DIAMOND SURFACES; DIAMOND-BASED ELECTRONIC DEVICES; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; PHOTOCONDUCTIVE GAINS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SILVER CONTACTS; THERMAL-ANNEALING; VALENCE-BAND MAXIMUMS;

ANNEALING; METAL ANALYSIS; PHOTOELECTRONS; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; X RAY PHOTOELECTRON SPECTROSCOPY;

DIAMONDS;

EID: 84861825030 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4718028 Document Type: Article

Times cited : (25)

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