Enhanced crystal grain size by bromine doping in electrodeposited Cu 2O

Thin Solid Films

Volumn 520, Issue 16, 2012, Pages 5239-5244

  Han, Kunhee ^a   Kang, Feng ^a   Han, Xiaofei ^b   Tao, Meng ^a  

^a The University of Texas at Arlington   (United States)

^b UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

Author keywords

Crystal morphology; Cuprous oxide; Doping; Electrochemical deposition; Nucleation; Scanning electron microscopy; X ray diffraction

Indexed keywords

ACETATE BATHS; COPPER PRECURSORS; CRYSTAL GRAIN SIZE; CRYSTAL MORPHOLOGIES; CUPROUS OXIDE; DEPOSITION CONDITIONS; DEPOSITION POTENTIAL; DEPOSITION TEMPERATURES; ELECTROCHEMICAL DEPOSITION; GRAIN SIZE; HIGH RESISTIVITY; INDIUM TIN OXIDE SUBSTRATES; LARGE CRYSTAL; LINEAR DIMENSIONS; NUCLEATION DENSITIES; PRECURSOR CONCENTRATION; REDOX COUPLE; SOLUTION PH; VACUUM-ANNEALING;

BROMINE; DOPING (ADDITIVES); ELECTRODEPOSITION; GRAIN SIZE AND SHAPE; INDIUM COMPOUNDS; NUCLEATION; REDUCTION; SCANNING ELECTRON MICROSCOPY; TIN; TIN OXIDES; X RAY DIFFRACTION;

SEMICONDUCTOR DOPING;

EID: 84861739618     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.03.094     Document Type: Article

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