SCOPUS 정보 검색 플랫폼

Volumn 111, Issue 7, 2012, Pages

Rectifying characteristics, magnetic tunability, and photovoltaic response in La 0.8Hf 0.2MnO 3/0.7 wt% Nb-SrTiO 3 heteroepitaxial junctions

(3) Wu, Z P a Wang, L a Gao, J a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION VOLTAGE; HETEROEPITAXIAL; NB-DOPED SRTIO; PHOTO-VOLTAGE; PHOTOVOLTAIC RESPONSE; RECTIFYING BEHAVIORS; RECTIFYING CHARACTERISTICS; SUDDEN CHANGE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TUNABILITIES;

EPITAXIAL GROWTH; HAFNIUM; MAGNETIC FIELDS; MANGANESE OXIDE; PHOTOVOLTAIC EFFECTS; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; STRONTIUM TITANATES;

HETEROJUNCTIONS;

EID: 84861734372 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3678491 Document Type: Conference Paper

Times cited : (17)

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