Electronic structures and Hall effect in low-doped La0.9 Hf0.1 MnO3 epitaxial films

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Wang, L ^a   Gao, J ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISMS; CORE LEVELS; ELECTRON-DOPED; FILM SURFACES; HALL RESISTIVITIES; MAGNETIC-FIELD DEPENDENCES; MIXED-VALENCE STATE; NOMINAL COMPOSITIONS; SPLITTING ENERGIES; TRIVALENT STATE; X-RAY PHOTOEMISSION SPECTROSCOPIES; XPS SPECTRUM;

ATOMS; BINDING ENERGY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL FILMS; HAFNIUM; HALL EFFECT; LANTHANUM; MAGNETIC FIELD EFFECTS; MANGANESE; MANGANESE COMPOUNDS; THREE DIMENSIONAL; X RAY PHOTOELECTRON SPECTROSCOPY;

EMISSION SPECTROSCOPY;

EID: 65249135636     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3076898     Document Type: Article

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