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Volumn 111, Issue 7, 2012, Pages

Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co 2FeAl 0.5Si 0.5 Heusler electrodes on MgO (110) single substrates

(3) Tezuka, N a Mitsuhashi, F a Sugimoto, S a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEUSLER; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE RATIO; MGO; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TUNNEL MAGNETORESISTANCE; TUNNEL MAGNETORESISTANCE EFFECTS;

CARBON DIOXIDE; ELECTRODES; IRON COMPOUNDS; MAGNETIC DEVICES; MAGNETORESISTANCE; SILICON;

SUBSTRATES;

EID: 84861728935 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3678586 Document Type: Conference Paper

Times cited : (5)

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