Dynamics behavior and defects evolution of silicon nitride nanowires under tension and compression load: A molecular dynamics study

Computational Materials Science

Volumn 62, Issue , 2012, Pages 17-22

  Lu, Xuefeng ^a   Chen, Meng ^a   Qiu, Dong ^a   Fan, Lei ^a   Wang, Chao ^a   Wang, Hongjie ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Aspect ratios; Breaking strength; Molecular dynamics; Silicon nitride nanowires

Indexed keywords

BREAKING STRENGTH; COMPRESSION DEFORMATION; DEFECTS EVOLUTION; DEFORMATION MECHANISM; DYNAMICS BEHAVIOR; ELASTIC LIMIT; MAXIMUM VALUES; MOLECULAR DYNAMICS SIMULATIONS; SI ATOMS; SI-SI BONDS; SILICON-NITRIDE NANOWIRES; SINGLE-CRYSTALLINE; TENSION AND COMPRESSION; TENSION DEFORMATION; TOP SURFACE;

ALUMINUM SHEET; ASPECT RATIO; ATOMS; CHEMICAL BONDS; DEFORMATION; FRACTURE; MECHANICAL PROPERTIES; MOLECULAR DYNAMICS; NANOWIRES; SILICON; SILICON NITRIDE; STRESS CONCENTRATION;

SURFACE DEFECTS;

EID: 84861553620     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2012.04.004     Document Type: Article

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