Optical determination of the dopant concentration in the δ-doping layer

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 163-167

  Drabińska, Aneta ^a   Babinski A ^a   Tomaszewicz, T ^a   Bozek, R ^a   Baranowski, J M ^a  

^a UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT CONCENTRATIONS; DOPING LAYERS; ELECTROREFLECTANCE; FRANZ-KELDYSH OSCILLATIONS; GAAS; LOW-DIMENSIONAL STRUCTURES; OPTICAL DETERMINATION; PSEUDOMORPHIC INGAAS; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS;

ELECTRIC FIELDS; TIN;

SEMICONDUCTOR DOPING;

EID: 84861445706     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484226     Document Type: Article

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