Surface photovoltage measurements in μc-Si:H: Manifestation of the bottom space charge region

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2323-2329

  Svrcek V ^a   Pelant, I ^a   Fojtik P ^a   Kocka J ^a   Fejfar, A ^a   Tousek J ^b   Kondo, M ^c   Matsuda, A ^c  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b CHARLES UNIVERSITY   (Czech Republic)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; AMBIPOLAR; CARRIER DIFFUSION LENGTH; CRYSTALLINE SILICONS; DEPLETION LAYER; ENERGETIC PHOTONS; HYDROGENATED MICROCRYSTALLINE SILICON; LARGE PENETRATIONS; MINORITY CARRIER DIFFUSION LENGTH; PHOTO-VOLTAGE; PHOTOCHARGE; REVERSE-SATURATION CURRENTS; SPACE CHARGE REGIONS; SUBSTRATE MATERIAL; SURFACE PHOTOVOLTAGES; THICK LAYERS; THIN FILM SOLAR CELLS; ZNO FILMS;

MATHEMATICAL MODELS; METALLIC FILMS; SEMICONDUCTOR JUNCTIONS; SURFACE PROPERTIES;

SILICON;

EID: 84861426241     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495895     Document Type: Article

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