Scattering by flexural phonons in suspended graphene under back gate induced strain

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 44, Issue 6, 2012, Pages 963-966

  Ochoa, H ^a   Castro, Eduardo V ^a,b   Katsnelson, M I ^c   Guinea, F ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSITY OF PORTO   (Portugal)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

Graphene; Phonons; Resistivity; Strain

Indexed keywords

BACK GATES; INDUCED STRAIN; OUT-OF-PLANE; PHONON MODE; QUADRATIC DISPERSION; ROTATIONAL SYMMETRIES;

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GRAPHENE; PHONONS;

STRAIN;

EID: 84861186804     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.03.017     Document Type: Article

References (20)

1. S.V. Morozov Phys. Rev. Lett. 100 2008 016602
2. X. Du Nat. Nanotech. 3 2008 491
3. K.I. Bolotin Solid State Commun. 146 2008 351
4. K.I. Bolotin Phys. Rev. Lett. 101 2008 096802
5. L.D. Landau, and E.M. Lifschitz Theory of Elasticity 1959 Pergamon Press Oxford
6. D. Nelson D. Nelson, T. Piran, S. Weinberg, Statistical Mechanics of Membranes and Surfaces 1989 World Scientific Singapore
7. M.I. Katsnelson, and A.K. Geim Philos. Trans. R. Soc. A 366 2008 195
8. E. Mariani, and F. Von Oppen Phys. Rev. Lett. 100 2008 076801
9. E. Mariani, and F. Von Oppen Phys. Rev. Lett. 100 2008 249901(E)
10. K.V. Zakharchenko, M.I. Katsnelson, and A. Fasolino Phys. Rev. Lett. 102 2009 046808
11. A.H. Castro Neto Rev. Mod. Phys. 81 2009 109
12. H. Suzuura, and T. Ando Phys. Rev. B 65 2002 235412
13. J.L. Mañes Phys. Rev. B 76 2007 045430
14. S.-M. Choi, S.-H. Jhi, and Y.-W. Son Phys. Rev. B 81 2010 081407
15. M.A.H. Vozmediano, M.I. Katsnelson, and F. Guinea Phys. Rep. 496 2010 109
16. A.J. Heeger Rev. Mod. Phys. 60 1988 781
17. Derivation details will be given elsewhere.
18. E.H. Hwang, and S. Das Sarma Phys. Rev. B 77 2008 115449
19. M.M. Fogler, F. Guinea, and M.I. Katsnelson Phys. Rev. Lett. 101 2008 226804
20. We used g=3 eV, β = 3, ΔL = 0, and L = 0.3 μm. The latter parameter is interpreted as an effective length mimicking the difference between our two side clamped membrane and the real four point clamped device.