Local interdiffusion at buried TiN/Si interfaces with scanning probes

Journal of Physics D: Applied Physics

Volumn 45, Issue 21, 2012, Pages

  Chen, C H ^a   Cheng, C E ^b,c   Hsu, C C ^b   Chang, M N ^d   Shiu, H W ^a,e   Chien, F S S ^c  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^c TUNGHAI UNIVERSITY   (Taiwan)

^d NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON; BURIED INTERFACE; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ETHANOL MENISCI; SCANNING PROBES; SI DIFFUSION; SI SUBSTRATES; THIN TIN; TIN LAYERS;

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; ETHANOL; PHOTOELECTRON SPECTROSCOPY; SILICON;

TITANIUM NITRIDE;

EID: 84861091172     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/21/215307     Document Type: Article

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