Photoinduced current properties of InAs-covered GaAs studied by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 B, 1999, Pages 3871-3874

  Yamamoto, Hiroshi ^a   Kamiya, Itaru ^b   Takahashi, Takuji ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; PHOTOCURRENTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; WETTING;

INDIUM ARSENIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032594514     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3871     Document Type: Article

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