Influence of damp heat on the electrical, optical, and morphological properties of encapsulated CuInGaSe 2 devices

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 003404-003409

  Sundaramoorthy, R ^a   Pern, F J ^a   Teeter, G ^a   Li, Jian V ^a   Young, M ^a   Kuciauskas, D ^a   Call, N ^a   Yan, F ^a   To, B ^a   Johnston, S ^a   Noufi, R ^a   Gessert, T A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; BACKSHEETS; CDS BUFFER; CUINGASE; DAMP HEAT; FILL FACTOR; JUNCTION DEGRADATION; MINORITY CARRIER; MINORITY CARRIER LIFETIMES; MOISTURE INGRESS; MORPHOLOGICAL PROPERTIES; NEW COMPONENTS; PERFORMANCE DEGRADATION; SERIES RESISTANCES; TIME-RESOLVED PHOTOLUMINESCENCE; WATER VAPOR TRANSMISSION RATE; WINDOW LAYER;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; DEGRADATION; ELECTRIC RESISTANCE; MOISTURE; PHOTOVOLTAIC EFFECTS; SURFACE ANALYSIS; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84861073909     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186678     Document Type: Conference Paper

References (10)

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