Improved FF in P-Si heterojunction solar cells due to optimized ITO/emitter contact

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 001424-001428

  Eygi, Zeynep Deniz ^a,b   Das, Ujjwal ^a   Hegedus, Steven ^a   Birkmire, Robert ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AS DOPING; BLOCKING CONTACTS; DC PLASMA; DEPOSITION PARAMETERS; DEPOSITION POWER; EMITTER LAYERS; FILL FACTOR; HETEROCONTACTS; HETEROJUNCTION SOLAR CELLS; LOW RESISTANCE; P-TYPE SILICON; STRUCTURAL CHARACTERIZATION; SURFACE PASSIVATION; TEST STRUCTURE;

DC POWER TRANSMISSION; HETEROJUNCTIONS; OHMIC CONTACTS; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS;

POLYSILICON;

EID: 84861070273     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186224     Document Type: Conference Paper

References (4)

1. rdIEEE PVSC, 2010
2. A.A. Lanford, M.L Fleet, B.P. Nelson, "Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon", Physical Review B, 45, Number 23, 1992
3. M.Z Burrows et al, "Role of hydrogen bonding environment in a-Si:H films for c-Si surface passivation", Journal of Vacuum Science and Tech.A, 26, Issue:4, 2008, pp:683-687
4. S. Hegedus, W.Shafarman, "Thin-Film Solar Cells: Device Measurements and Analysis" Prog. Photovoltaic: Res Appl. 12, 2004, pp: 155-176 (Pubitemid 38460413)