Fast Cu(In, Ga)Se 2 formation by processing Cu-In-Ga precursors in selenium atmosphere

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 003315-003320

  Weber, A ^a   Rodriguez, H ^a   Mainz, R ^a   Klaer, J ^a   Pistor, P ^a   Klenk, R ^a   Klaus, M ^a   Meeder, A ^b   Neisser, A ^b   Schock, H W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b Soltecture GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; BEAM LINES; CROSS SECTION; CU(IN , GA)SE; DIFFRACTION SIGNALS; ENERGY DISPERSIVE; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; EXPERIMENTAL SETUP; FILL FACTOR; FLUORESCENCE INTENSITIES; FLUORESCENCE LINES; GASPHASE; HIGH-TIME RESOLUTION; HIGHER TEMPERATURES; IN-PHASE; IN-SITU XRD; LOW BAND GAP; METALLIC DIFFRACTION; METALLIC PHASE; METALLIC PHASIS; METALLIC PRECURSOR; REACTION PATHS; ROOM TEMPERATURE; SELENIDES; SELENIZATION; VACUUM PROCESS; WHITE LIGHT;

COPPER COMPOUNDS; DIFFRACTION; ENERGY DISPERSIVE SPECTROSCOPY; FLUORESCENCE; GALLIUM; INDIUM; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SELENIUM; SELENIUM COMPOUNDS;

COPPER;

EID: 84861064005     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186649     Document Type: Conference Paper

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