InGaP/GaAs/InGaAs triple junction concentrators using bi-facial epigrowth

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7769, Issue , 2010, Pages

  Chiu, Philip ^a   Wojtczuk, Steven ^a   Zhang, Xuebing ^a   Derkacs, Daniel ^a   Harris, Chris ^a   Pulver, Daryl ^a   Timmons, Mike ^b  

^a Spire Semiconductor   (United States)

^b NONE

Author keywords

Metal organic chemical vapor deposition; Multijunction; Solar cells

Indexed keywords

CONCENTRATOR CELLS; EPITAXIAL LIFTOFF; EPITAXIALLY GROWN; EPIWAFERS; GAAS; GAAS WAFER; INGAP/GAAS/INGAAS; LATTICE-MATCHED; LATTICE-MISMATCHED; MANUFACTURING PROCESS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIJUNCTION; PROCESS STEPS; TRIPLE JUNCTION; WAFER SURFACE; WORLD RECORD EFFICIENCY;

CONCENTRATION (PROCESS); GALLIUM ALLOYS; GALLIUM ARSENIDE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; SOLAR CONCENTRATORS;

WAFER BONDING;

EID: 77958097001     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.862914     Document Type: Conference Paper

References (9)

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6. Wojtczuk, S.W., P.T. Chiu, X. Zhang, D. Derkacs, C. Harris, D. Pulver, and M. Timmons, "InGaP/GaAs/InGaAs 41% Concentrator Cells Using Bi-Facial Epigrowth". 35th IEEE PVSC Conference Proceedings, in press, (2010).
7. The bi-facial epigrowth cell was previously described by Varian in 1990. They discuss the idea of growing an AlGaAs/GaAs on one side of the wafer and the InGaAs cell on the opposite side. However, the cell was never grown.
8. Spitzer, W.G. and J.M. Whelan, Phys. Rev., 114(59, (1959).
9. Palik, E.D., Handbook of Optical Constants of Solids. 1985: Academic Press.