Thickness effect of Al-doped ZnO window layer on damp-heat stability of CuInGaSe 2 solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 002798-002803

  Pern, F J ^a   Mansfield, L ^a   DeHart, C ^a   Glick, S H ^a   Yan, F ^a   Noufi, R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; BACKSHEETS; CONTACT PADS; CUINGASE; CURRENT VOLTAGE; DAMP HEAT; EFFICIENCY DEGRADATION; ELECTRICAL CONTACTS; ENCAPSULATED CELL; IMPEDANCE SPECTROSCOPY; METAL GRID; MOISTURE INGRESS; RAPID DEGRADATION; SAMPLE SETS; TEST STRUCTURE; THICKNESS EFFECT; WEAK CORRELATION; WINDOW LAYER; ZNO BUFFER LAYER;

CORROSION; DEGRADATION; DELAMINATION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; MOISTURE CONTROL; MOLYBDENUM; PHOTOVOLTAIC EFFECTS; ZINC OXIDE;

ALUMINUM;

EID: 84861035684     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186527     Document Type: Conference Paper

References (10)

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