A model for energy quantization of single-electron transistor below 10nm

Proceedings of International Conference on ASIC

Volumn , Issue , 2011, Pages 531-534

  Chen, Xiaobao ^a   Xing, Zuocheng ^a   Sui, Bingcai ^a  

^a NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

Author keywords

discrete energy levels; Energy quantization; orthodox theory; single electron transistor (SET)

Indexed keywords

ASIC DESIGN; CHARGE STATE; DISCRETE ENERGY LEVELS; ENERGY QUANTIZATION; LOW-POWER CONSUMPTION; ORTHODOX THEORY; QUALITATIVE ANALYSIS; ULTRA-SMALL;

CAPACITANCE MEASUREMENT; INTEGRATED CIRCUITS; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 84860880050     PISSN: 21627541     EISSN: 2162755X     Source Type: Conference Proceeding    
DOI: 10.1109/ASICON.2011.6157239     Document Type: Conference Paper

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