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Volumn 15, Issue , 2012, Pages 361-370
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Electrical properties of Al-doped CdO thin films prepared by thermal evaporation in vacuum
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Author keywords
CdO thin films; Electrical properties; Metal semiconductor transition
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Indexed keywords
AL-CONCENTRATION;
AL-DOPING;
BEST VALUE;
CDO FILMS;
CDO THIN FILMS;
DEGENERATE ELECTRONS;
DOPANT ADDITIONS;
ELECTRICAL CONDUCTIVITY;
ELECTRON CONCENTRATION;
ENERGY GAP VALUES;
GLASS SUBSTRATES;
HIGH AL CONTENT;
IN-VACUUM;
LOCALISATION;
METAL-SEMICONDUCTOR TRANSITIONS;
OPTICAL TRANSMISSION SPECTRUM;
SMALL REDUCTION;
SPECTRAL REGION;
TEMPERATURE-DEPENDENT RESISTIVITY;
XRD PATTERNS;
ALUMINUM;
CADMIUM COMPOUNDS;
ELECTRIC CONDUCTIVITY;
ELECTRIC PROPERTIES;
SEMICONDUCTOR DOPING;
SUBSTRATES;
THERMAL EVAPORATION;
THIN FILMS;
VACUUM;
FILM PREPARATION;
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EID: 84860505472
PISSN: 18766102
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1016/j.egypro.2012.02.044 Document Type: Conference Paper |
Times cited : (44)
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References (9)
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