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Volumn , Issue , 2011, Pages 1546-1549

A compact and power-scalable 70W GaN class-E power amplifier operating from 1.7 to 2.6 GHz

Author keywords

Bondwire; class E; Gallium Nitride (GaN); power amplifiers; power transistors; transformer; wideband

Indexed keywords

BONDWIRE; CLASS E; POWER TRANSISTORS; TRANSFORMER; WIDE-BAND;

EID: 84860502337     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (12)

References (11)
  • 1
    • 80052327705 scopus 로고    scopus 로고
    • A 19W high-efficiency wide-band CMOS-GaN class-E chireix RF outphasing power amplifier
    • June
    • M. P. van der Heijden, et al., "A 19W High-Efficiency Wide-Band CMOS-GaN Class-E Chireix RF Outphasing Power Amplifier," in IEEE MTT-S Int. Microw. Symp. Dig., June 2011.
    • (2011) IEEE MTT-S Int. Microw. Symp. Dig.
    • Van Der Heijden, M.P.1
  • 2
    • 84855808390 scopus 로고    scopus 로고
    • A Compact 65W 1.7-2.3GHz Class-E GaN power amplifier for base stations
    • K. Shi, et al., "A Compact 65W 1.7-2.3GHz Class-E GaN Power Amplifier for Base Stations," in European Microw. Conf., Oct. 2011.
    • (2011) European Microw. Conf., Oct.
    • Shi, K.1
  • 4
    • 0036065920 scopus 로고    scopus 로고
    • Class E with parallel circuit-A new challenge for high-efficiency RF and microwave power amplifiers
    • Aug.
    • A. Grebennikov and H. Jaeger, "Class E with Parallel Circuit-A New Challenge for High-Efficiency RF and Microwave Power Amplifiers," in IEEE MTT-S Int. Microw. Symp. Dig., vol. 3, pp. 1627-1630, Aug. 2002.
    • (2002) IEEE MTT-S Int. Microw. Symp. Dig. , vol.3 , pp. 1627-1630
    • Grebennikov, A.1    Jaeger, H.2
  • 5
    • 54049111923 scopus 로고    scopus 로고
    • Analytical design equations for class-e power amplifiers
    • Dec.
    • M. Acar, A. Annema, and B. Nauta, "Analytical Design Equations for Class-E Power Amplifiers," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 54, pp. 2706-2717, Dec. 2007.
    • (2007) IEEE Trans. Circuits Syst. I, Reg. Papers , vol.54 , pp. 2706-2717
    • Acar, M.1    Annema, A.2    Nauta, B.3
  • 6
    • 0017629837 scopus 로고
    • Idealized operation of the class e tuned power amplifier
    • Dec.
    • F. H. Raab, "Idealized Operation of the Class E Tuned Power Amplifier," IEEE Trans. Circuits Syst., vol. 24, pp. 725-735, Dec. 1977.
    • (1977) IEEE Trans. Circuits Syst. , vol.24 , pp. 725-735
    • Raab, F.H.1
  • 7
    • 0017958764 scopus 로고
    • Effects of circuit variations on the class e tuned power amplifier
    • Apr.
    • F. H. Raab, "Effects of Circuit Variations on the Class E Tuned Power Amplifier," IEEE J. Solid-State Circuits, vol. 13, pp. 239-247, Apr. 1978.
    • (1978) IEEE J. Solid-State Circuits , vol.13 , pp. 239-247
    • Raab, F.H.1
  • 8
    • 30344481710 scopus 로고    scopus 로고
    • A high-efficiency class-E gan HEMT power amplifier at 1.9 Ghz
    • Jan.
    • H. Xu, et al., "A High-Efficiency Class-E GaN HEMT Power Amplifier at 1.9 GHz," IEEE Microw. Wireless Compon. Lett., vol. 16, pp. 22-24, Jan. 2006.
    • (2006) IEEE Microw. Wireless Compon. Lett. , vol.16 , pp. 22-24
    • Xu, H.1
  • 9
    • 34547740520 scopus 로고    scopus 로고
    • A high-efficiency class-E GaN HEMT power amplifier for WCDMA applications
    • Aug.
    • Y.-S. Lee and Y.-H. Jeong, "A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications," IEEE Microw. Wireless Compon. Lett., vol. 17, pp. 622-624, Aug. 2007.
    • (2007) IEEE Microw. Wireless Compon. Lett. , vol.17 , pp. 622-624
    • Lee, Y.-S.1    Jeong, Y.-H.2
  • 10
    • 41549088830 scopus 로고    scopus 로고
    • A 100W class-E GaN HEMT with 75% drain efficiency at 2Ghz
    • Sept.
    • N. Ui and S. Sano, "A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz," in European Microw. Integrated Circuits Conf., pp. 72-74, Sept. 2006.
    • (2006) European Microw. Integrated Circuits Conf. , pp. 72-74
    • Ui, N.1    Sano, S.2
  • 11
    • 77950018241 scopus 로고    scopus 로고
    • A compact 12-watt high-efficiency 2.1-2.7 GHz Class-E GaN HEMT power amplifier for base stations
    • June
    • M. P. van der Heijden, M. Acar, and J. S. Vromans, "A Compact 12-Watt High-Efficiency 2.1-2.7 GHz Class-E GaN HEMT Power Amplifier for Base Stations," in IEEE MTT-S Int. Microw. Symp. Dig., pp. 657-660, June 2009.
    • (2009) IEEE MTT-S Int. Microw. Symp. Dig. , pp. 657-660
    • Van Der Heijden, M.P.1    Acar, M.2    Vromans, J.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.