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Volumn 100, Issue 17, 2012, Pages

Co/Ni multilayers with perpendicular anisotropy for spintronic device applications

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY ENERGIES; AS-DEPOSITED STATE; BI-LAYER; MAGNETIC ELECTRODES; MAGNETIC TUNNEL JUNCTION; MGO; PERPENDICULAR ANISOTROPY; PERPENDICULAR MAGNETIZATION COMPONENT; SPIN TORQUE; SPINTRONIC DEVICE; SUBLAYER THICKNESS;

EID: 84860324870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704184     Document Type: Article
Times cited : (84)

References (24)
  • 2
    • 0001317947 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.54.9353
    • L. Berger, Phys. Rev. B 4, 9353 (1996). 10.1103/PhysRevB.54.9353
    • (1996) Phys. Rev. B , vol.4 , pp. 9353
    • Berger, L.1
  • 7
    • 42149099347 scopus 로고    scopus 로고
    • Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
    • DOI 10.1063/1.2840016
    • H. Ohmori, T. Hatori, and S. Nakagawa, J. Appl. Phys. 103, 07A911 (2008). 10.1063/1.2840016 (Pubitemid 351538121)
    • (2008) Journal of Applied Physics , vol.103 , Issue.7
    • Ohmori, H.1    Hatori, T.2    Nakagawa, S.3
  • 13
    • 84860337394 scopus 로고
    • Ph.D. dissertation, Eindhoven University
    • P. J. H. Bloemen, Ph.D. dissertation, Eindhoven University, 1993.
    • (1993)
    • Bloemen, P.J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.