SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 17, 2012, Pages

Effect of oxidizing the ferromagnetic electrode in magnetic tunnel junctions on tunneling magnetoresistance

(10) Joo, Sungjung a Jung, K Y a,b Lee, B C c Kim, Tae Suk a Shin, K H b Jung, Myung Hwa d Rho, K J e Park, J H e Hong, Jinki a Rhie, K a

a Korea University (South Korea)

b Korea Institute of Science and Technology (South Korea)

c Inha University (South Korea)

d Sogang University (South Korea)

e Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC ELECTRODES; FERROMAGNETIC LAYERS; JUNCTION RESISTANCES; LOCALIZED MAGNETIC MOMENTS; MAGNETIC TUNNEL JUNCTION; SCATTERING CENTERS; SPIN DEPENDENT TRANSPORT; SPIN-POLARIZED TUNNELING; TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE; WORK SUPPORT;

FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC MOMENTS; MAGNETORESISTANCE;

MAGNETIC DEVICES;

EID: 84860318539 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4704557 Document Type: Article

Times cited : (11)

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