Study of Kondo effect in MgO-based magnetic tunnel junctions by electron tunnelling spectroscopy

Journal of Physics: Conference Series

Volumn 200, Issue SECTION 5, 2010, Pages

  Bang, Do ^a,e   Nozaki, T ^a   Suzuki, Y ^a,c   Rhie, K ^b   Kim, T S ^d   Fukushima, A ^c   Yuasa, S ^c   Minamitani, E ^a   Nakanishi, H ^a   Kasai, H ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Korea University   (South Korea)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d Korea Research Institute of Standards and Science   (South Korea)

^e INSTITUTE OF MATERIALS SCIENCE   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON TUNNELING; KONDO EFFECT; MAGNESIA; MAGNETISM; SINGLE CRYSTALS; SPECTROSCOPY; TEMPERATURE; TUNNEL JUNCTIONS;

BORON-DOPED; DYNAMIC RESISTANCE; FERROMAGNETIC ELECTRODES; LOGARITHMIC TEMPERATURE; LOW TEMPERATURES; MAGNETIC TUNNEL JUNCTION; ZERO-BIAS ANOMALY;

MAGNETIC DEVICES;

EID: 77957030507     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/200/5/052004     Document Type: Conference Paper

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