Influence of technological factors on conductivity and dielectric dispersion in ZnO nanocrystalline thin films

Journal of Alloys and Compounds

Volumn 531, Issue , 2012, Pages 64-69

  Kapustianyk, V ^a   Eliyashevskyy, Yu ^a   Turko, B ^a   Czapla, Z ^b,c   Dacko, S ^b   Barwinski B ^b  

^a IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

^b UNIVERSITY OF WROC AW   (Poland)

^c OPOLE UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Dielectric response; Nanofabrications; Oxide materials; Thin films; Vapor deposition

Indexed keywords

ARGON ATMOSPHERES; AS ANNEALING; BULK MATERIALS; DEFECT CONCENTRATIONS; DIELECTRIC PERMITTIVITIES; DIELECTRIC RESPONSE; DIPOLE POLARIZATION; ELECTRIC FIELD FREQUENCY; FREQUENCY RANGES; FREQUENCY WINDOWS; HIGH FREQUENCY HF; LOW-FREQUENCY RELAXATION; NANO GRAINS; NANO-STRUCTURED; NANOCRYSTALLINE THIN FILMS; OXIDE MATERIALS; RF-MAGNETRON SPUTTERING; SUBSTRATE HEATING; TECHNOLOGICAL FACTORS; TEMPERATURE RANGE; ZINC OXIDE THIN FILMS; ZNO;

DIELECTRIC MATERIALS; ELECTRIC FIELDS; GRAIN BOUNDARIES; OXIDE FILMS; PERMITTIVITY; POLARIZATION; RELAXATION PROCESSES; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

DISPERSIONS;

EID: 84860278569     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.02.169     Document Type: Article

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