Growth and analysis of GaN nanowire on PZnO by different-gas flow

Applied Surface Science

Volumn 258, Issue 17, 2012, Pages 6590-6594

  Shekari, L ^a   Hassan, H Abu ^a   Thahab, S M ^b   Ghazai, A J ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

^b UNIVERSITY OF KUFA   (Iraq)

Author keywords

Characterization; GaN; Nanowires; Single crystal growth

Indexed keywords

CHARACTERIZATION; ENERGY DISPERSIVE SPECTROSCOPY; FLOW OF GASES; GALLIUM NITRIDE; GASES; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SINGLE CRYSTALS; THERMAL EVAPORATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

ENERGY DISPERSIVE X RAY SPECTROSCOPY; GAS ATMOSPHERE; GROWTH DIRECTIONS; HIGH-RESOLUTION X-RAY DIFFRACTION; MICRO-STRUCTURAL; POROUS ZINC OXIDES; STRUCTURAL AND OPTICAL CHARACTERIZATIONS; UNIFORM DIAMETER;

ARGON;

EID: 84860235204     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.03.084     Document Type: Article

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