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Applied Physics Letters

Volumn 100, Issue 16, 2012, Pages

Resistive switching phenomenon driven by antiferromagnetic phase separation in an antiperovskite nitride Mn 3ZnN

(9) Sun, Y S a Guo, Y F a Wang, X X a,b Tsujimoto, Y a Matsushita, Y a Shi, Y G c Wang, C d Belik, A A a Yamaura, K a,b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b HOKKAIDO UNIVERSITY (Japan)

c INSTITUTE OF PHYSICS (China)

d BEIHANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC PHASE; ANTIPEROVSKITE; ELECTRICAL RESISTIVITY; MANGANESE NITRIDES; NON-VOLATILE MEMORY APPLICATION; RESISTIVE SWITCHING;

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; ELECTRIC CONDUCTIVITY; MAGNETIC SUSCEPTIBILITY; MANGANESE; NITRIDES; ZINC COMPOUNDS;

PHASE SEPARATION;

EID: 84859957288 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4704664 Document Type: Article

Times cited : (28)

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