Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

Chinese Physics B

Volumn 20, Issue 2, 2011, Pages

  Yang, Yan ^a   Li, Sheng Tao ^a   Ding, Can ^a   Cheng, Peng Fei ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b XI'AN POLYTECHNIC UNIVERSITY   (China)

Author keywords

deep bulk trap; interface state; relaxation; ZnO

Indexed keywords

AC SIGNALS; APPROXIMATE CALCULATIONS; BARRIER HEIGHTS; BULK TRAPS; CROSS POINT; CURRENT FLOWING; CURRENT VOLTAGE; DEPLETION LAYER; DIELECTRIC SPECTRA; DISPLACEMENT CURRENTS; ELECTRONIC LEVELS; ELECTRONIC RELAXATION; HIGH TEMPERATURE; INTERFACE STATE; RELAXATION; STEADY-STATE CONDITION; STEADY-STATE RESPONSE; TEMPERATURE DEPENDENT; ZNO; ZNO CERAMIC;

ACTIVATION ENERGY; CERAMIC MATERIALS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; OXYGEN; RESONANCE; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79952414401     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/2/025201     Document Type: Article

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