Phase diagram and spin-glass phenomena in electron-doped La 1-xHf xMnO 3 (0.05 ≤ x ≤ 0.3) manganite oxides

Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

  Guo, E J ^a,b   Wang, L ^a,b   Wu, Z P ^a   Lu, H B ^b   Jin, K J ^b   Gao, J ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AGING PROCESS; BROAD TEMPERATURE RANGES; COLOSSAL MAGNETORESISTANCE EFFECT; CURIE POINTS; DOUBLE EXCHANGE; ELECTRON-DOPED; FERROMAGNETIC PHASE; HF CONCENTRATION; HOLE-DOPED MANGANITES; LOW TEMPERATURES; MAGNETIC PHASE; METAL-TO-INSULATOR TRANSITIONS; POLYCRYSTALLINE; RESISTANCE MEASUREMENT; SPIN-GLASS STATE;

COLOSSAL MAGNETORESISTANCE; HAFNIUM; MAGNETIC PROPERTIES; MAGNETIZATION; MANGANESE; MANGANITES; PHASE DIAGRAMS; SEMICONDUCTOR DOPING; SPIN GLASS;

MANGANESE OXIDE;

EID: 84859339804     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3666056     Document Type: Article

References (32)

1. J. Fontcuberta, B. Martinez, A. Seffar, S. Pinol, J. L. GarciaMunoz, and X. Obradors, Phys. Rev. Lett. 76, 1122 (1996). 10.1103/PhysRevLett.76.1122
2. C. H. Booth, F. Bridges, G. H. Kwei, J. M. Lawrence, A. L. Cornelius, and J. J. Neumeier, Phys. Rev. Lett. 80, 853 (1998). 10.1103/PhysRevLett.80.853
3. A. Urshibara, Y. Moritomo, T. Arima, A. Asamitsu, G. Kido, and Y. Tokura, Phys. Rev. B 51, 14103 (1995). 10.1103/PhysRevB.51.14103
4. A. P. Ramirez, P. Schiffer, S.-W. Cheong, C. H. Chen, W. Bao, T. T. M. Palstra, P. L. Gammel, D. J. Bishop, and B. Zegarski, Phys. Rev. Lett. 76, 3188 (1996). 10.1103/PhysRevLett.76.3188
5. J. B. Philipp, L. Alff, A. Marx, and R. Gross, Phys. Rev. B 66, 224417 (2002). 10.1103/PhysRevB.66.224417
6. E. Dagotto, New J. Phys. 7, 67 (2005). 10.1088/1367-2630/7/1/067 (Pubitemid 41093449)
7. H. Y. Hwang, S.-W. Cheong, N. P. Ong, and B. Batlogg, Phys. Rev. Lett. 77, 2041 (1996). 10.1103/PhysRevLett.77.2041
8. B. Dabrowski, X. Xiong, Z. Bukowski, R. Dybzinski, P. W. Klamut, J. E. Siewenie, O. Chmaissem, J. Shaffer, C. W. Kimball, J. D. Jorgensen, and S. Short, Phys. Rev. B 60, 7006 (1999). 10.1103/PhysRevB.60.7006
9. J. Geck, P. Wochner, D. Bruns, B. Bchner, U. Gebhardt, S. Kiele, P. Reutler, and A. Revcolevschi, Phys. Rev. B 69, 104413 (2004). 10.1103/PhysRevB.69.104413
10. A. J. Millis, B. I. Shraiman, and R. Mueller, Phys. Rev. Lett. 77, 175 (1996). 10.1103/PhysRevLett.77.175
11. P. Schiffer, A. Ramirez, W. Bao, and S.-W. Cheong, Phys. Rev. Lett. 75, 3336 (1995). 10.1103/PhysRevLett.75.3336
12. E. J. Guo, J. Gao, and H. B. Lu, Appl. Phys. Lett. 98, 081903 (2011). 10.1063/1.3556613
13. H. L. Ju, J. Gopalakrishnan, J. L. Peng, Q. Li, G. C. Xiong, T. Venkatesan, and R. L. Greene, Phys. Rev. B 51, 6143 (1995). 10.1103/PhysRevB.51. 6143
14. S. Das and P. Mandal, Indian J. Phys. 71, 231 (1997); S. Das and P. Mandal Z. Phys. B: Condens. Matter 7, 104 (1997); P. Mandal and S. Das, Phys. Rev. B 56, 15073 (1997). 10.1103/PhysRevB.56.15073
15. J. R. Gebhardt, S. Roy, and N. Ali, J. Appl. Phys. 85, 5390 (1999). 10.1063/1.369987
16. C. Mitra, P. Raychaudhuri, J. John, S. K. Dhar, A. K. Nigam, and R. Pinto, J. Appl. Phys. 89, 524 (2001). 10.1063/1.1331648 (Pubitemid 33703413)
17. H. Chou, C. B. Wu, S. G. Hsu, and C. Y. Wu, Phys. Rev. B 74, 174405 (2006). 10.1103/PhysRevB.74.174405 (Pubitemid 44691636)
18. P. Raychaudhuri, C. Mitra, P. D. A. Mann, and S. Wirth, J. Appl. Phys. 93, 8328 (2003). 10.1063/1.1556976
19. G. T. Tan, S. Dai, P. Duan, Y. L. Zhou, H. B. Lu, and Z. H. Chen, Phys. Rev. B 68, 014426 (2003). 10.1103/PhysRevB.68.014426
20. H. Z. Guo, Z. H. Chen, L. F. Liu, S. Ding, Y. L. Zhou, H. B. Lu, K. J. Jin, and B. L. Chen, Appl. Phys. Lett. 85, 3172 (2004). 10.1063/1.1807015
21. J. Yang, Y. P. Lee, and Y. Li, Phys. Rev. B 76, 054442 (2007). 10.1103/PhysRevB.76.054442
22. Z. W. Li, A. H. Morrish, and J. Z. Jiang, Phys. Rev. B 60, 10284 (1999). 10.1103/PhysRevB.60.10284
23. J. Gao, S. Y. Dai, and T. K. Li, Phys, Rev. B 67, 153403 (2003). 10.1103/PhysRevB.67.153403
24. P. Duan, S. Y. Dai, G. T. Tan, H. B. Lu, Y. L. Zhou, B. L. Cheng, and Z. H. Chen, J. Appl. Phys. 95, 5666 (2004). 10.1063/1.1697636
25. J. Gao and L. Wang, Mater. Sci. Eng., B 144, 97 (2004). 10.1016/j.mseb.2007.07.098
26. L. Wang and J. Gao, J. Appl. Phys. 103, 07F702 (2008). 10.1063/1.2830682 (Pubitemid 351538720)
27. L. Wang and J. Gao, J. Appl. Phys. 105, 07E514 (2009). 10.1063/1.3076898
28. L. Wang and J. Gao, J. Appl. Phys. 105, 07C904 (2009). 10.1063/1.3063670
29. J. Yang, Y. P. Sun, W. H. Song, and Y. P. Lee, J. Appl. Phys. 100, 123701 (2006). 10.1063/1.2402030 (Pubitemid 46058165)
30. J. H. Kuo, H. U. Anderson, and D. M. Sparlin, J. Solid State Chem. 83, 52 (1989). 10.1016/0022-4596(89)90053-4
31. J. A. M. van Roosmalen and E. H. P. Cordfunke, J. Solid State Chem. 110, 109 (1994). 10.1006/jssc.1994.1143
32. R. S. Freitas, L. Ghivelder, F. Damay, F. Dias, and L. F. Cohen, Phys. Rev. B 64, 144404 (2001). 10.1103/PhysRevB.64.144404