Strain effect on the transport properties in low-doped La 0.9Hf0.1MnO3 epitaxial films

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Wang, L ^a   Gao, J ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; FILM THICKNESS; LANTHANUM COMPOUNDS; MAGNETORESISTANCE; METAL INSULATOR TRANSITION; PULSED LASER DEPOSITION; STRAIN CONTROL; SUPERCONDUCTING TRANSITION TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

LATTICE DEFORMATION; OXYGEN DEFICIENCY; SINGLE CRYSTAL SUBSTRATES;

EPITAXIAL FILMS;

EID: 42149114585     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2830682     Document Type: Conference Paper

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