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Physica B: Condensed Matter

Volumn 407, Issue 10, 2012, Pages 1481-1484

Ion implantation induced defects in ZnO

(5) Vines, L a Wong Leung, J b Jagadish, C b Monakhov, E V a Svensson, B G a

a UNIVERSITY OF OSLO (Norway)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

Deep energy levels; IIVI semiconductors; Ion radiation effects; Point defects and defect clusters

Indexed keywords

CAPACITANCE VOLTAGE; CONDUCTION BAND EDGE; DEEP DEFECTS; DEEP ENERGY LEVELS; DEEP-LEVEL DEFECTS; DEPTH DISTRIBUTION; GENERATION RATE; II-VI SEMICONDUCTOR; ION RADIATION EFFECTS; LIGHT ION IRRADIATION; POINT DEFECTS AND DEFECT CLUSTERS; SAMPLE TEMPERATURE; ZN IONS; ZNO; ZNO SINGLE CRYSTALS;

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION IMPLANTATION; POINT DEFECTS; ZINC; ZINC OXIDE;

DEFECTS;

EID: 84859157312 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2011.09.066 Document Type: Conference Paper

Times cited : (10)

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