Characterization of AlGaN-based metalsemiconductor solar-blind UV photodiodes with IrO 2 Schottky contacts

Physica B: Condensed Matter

Volumn 407, Issue 10, 2012, Pages 1529-1532

  Van Schalkwyk, L ^a   Meyer, W E ^a   Auret, F D ^a   Nel, J M ^a   Ngoepe, P N M ^a   Diale, M ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

AlGaN; Iridium oxide; Optoelectronic; Photodiode; Schottky; Solar blind; Ultraviolet

Indexed keywords

ALGAN; IRIDIUM OXIDE; OPTOELECTRONIC; SCHOTTKY; SOLAR-BLIND; ULTRAVIOLET;

ANNEALING; ELECTRIC RESISTANCE; GOLD COATINGS; IRIDIUM; IRIDIUM COMPOUNDS; OPTOELECTRONIC DEVICES; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SPECTRUM ANALYZERS;

PHOTODIODES;

EID: 84859156661     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.09.078     Document Type: Conference Paper

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